DMN3065LW-7, MOSFETs 30V N-Ch Enh Mode 12Vgss 465pF 5.5nC
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005059258
- Артикул
- DMN3065LW-7
- Бренд
- DIODES INC.
- Width
- 1.35mm
- Brand:
- Diodes Incorporated
- Series:
- DMN3065
- Pin Count
- 3
Цена по запросу
(от 43,67 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-MOSFET, полевой, 30В, 4А, 0,77Вт, SOT323
Технические параметры
| Width | 1.35mm |
| Brand: | Diodes Incorporated |
| Series: | DMN3065 |
| Pin Count | 3 |
| Fall Time: | 2 ns |
| Rise Time: | 1.6 ns |
| Вес, г | 0.01 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOT-323 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-323-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 11.7 nC |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Forward Diode Voltage | 1.2V |
| Особенности | - |
| Pd - Power Dissipation: | 770 mW |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 770 mW |
| Typical Gate Charge @ Vgs | 11.7 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 1.9 ns |
| Maximum Drain Source Voltage | 30 V |
| Typical Turn-Off Delay Time: | 10.3 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 4 A |
| Maximum Gate Threshold Voltage | 1.5V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 0.5V |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 85 mΩ |
| Maximum Continuous Drain Current | 4 A |
| Rds On - Drain-Source Resistance: | 52 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 500 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Пороговое напряжение на затворе | -12 V, +12 V |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.77 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±12В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 85 mOhms |