DMN3026LVT-7, Транзистор: N-MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8066850600
- Артикул
- DMN3026LVT-7
- Бренд
- DIODES INC.
- PPAP
- No
- Type
- null
- Mounting
- Surface Mount
- Packaging
- Tape and Reel
Цена по запросу
(от 27 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
30 В 6,6 А 1,2 Вт 23mOhm@6.5A, 10 В 2 В при 250 мкА нулевые МОП-транзисторы TSOT-23-6 соответствуют требованиям ROHS
Технические параметры
| PPAP | No |
| Type | null |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 6 |
| Part Status | Active |
| Configuration | Single Quad Drain |
| Package Width | 1.6 mm |
| Package Length | 2.9 mm |
| Product Category | Power MOSFET |
| Supplier Package | TSOT-26 |
| Maximum IDSS (uA) | 1 |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Standard Package Name | SOT |
| Power Dissipation (Pd) | 1.2W |
| Typical Fall Time (ns) | 3 |
| Typical Rise Time (ns) | 2.5 |
| Total Gate Charge (Qg@Vgs) | 12.5nC@10V |
| Number of Elements per Chip | 1 |
| Input Capacitance (Ciss@Vds) | 643pF@15V |
| Continuous Drain Current (Id) | 6.6A |
| Maximum Power Dissipation (mW) | 1500 |
| Typical Gate Charge @ 10V (nC) | 12.5 |
| Typical Gate Charge @ Vgs (nC) | 5.7@4.5V|12.5@10V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 2.2 |
| Maximum Drain-Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 12.1 |
| Maximum Gate Threshold Voltage (V) | 2 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Typical Input Capacitance @ Vds (pF) | 643@15V |
| Maximum Drain-Source Resistance (mOhm) | 23@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |