DMN3016LFDE-7, Транзистор: N-MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062253950
- Артикул
- DMN3016LFDE-7
- Бренд
- DIODES INC.
- Type
- N Channel
- Type:
- Enhancement Mode MOSFET
- Brand:
- Diodes Incorporated
- Product:
- Enhancement Mode MOSFETs
Цена по запросу
(от 77,79 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
30 В 10 А 12 Мом при 10 В, 11 А 730 МВт при 2 В 250 мкА N-канальные МОП-транзисторы UDFN2020-6-EP ROHS
Технические параметры
| Type | N Channel |
| Type: | Enhancement Mode MOSFET |
| Brand: | Diodes Incorporated |
| Product: | Enhancement Mode MOSFETs |
| Fall Time: | 5.6 ns |
| Rise Time: | 16.5 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Diodes Incorporated |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | DFN-2020-6 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 25.1 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity: | 3000 |
| Power Dissipation (Pd) | 730mW |
| Pd - Power Dissipation: | 2.02 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 4.8 ns |
| Typical Turn-Off Delay Time: | 26.1 ns |
| Continuous Drain Current (Id) | 10A |
| Id - Continuous Drain Current: | 10 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 16 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.4 V |