DMN3016LDV-7, Транзистор: N-MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062253894
- Артикул
- DMN3016LDV-7
- Бренд
- DIODES INC.
- Brand:
- Diodes Incorporated
- Вес, г
- 1
- Technology:
- Si
- Subcategory:
- MOSFETs
Цена по запросу
(от 111,87 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Diodes Incorporated |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Diodes Incorporated |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Package / Case: | PowerDI3333-UXC-8 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 21 nC |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | N-Channel |
| Power Dissipation (Pd) | 1.8W |
| Pd - Power Dissipation: | 1.8 W |
| Total Gate Charge (Qg@Vgs) | 21nC |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Input Capacitance (Ciss@Vds) | 1.184nF@15V |
| Continuous Drain Current (Id) | 21A |
| Id - Continuous Drain Current: | 21 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 12 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Reverse Transfer Capacitance (Crss@Vds) | 107pF@15V |
| Vgs th - Gate-Source Threshold Voltage: | 1.4 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2000 |