DMN26D0UT-7, Транзистор N-MOSFET, полевой, 20В, 0,23А, 0,3Вт, SOT523
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8014351390
- Артикул
- DMN26D0UT-7
- Бренд
- DIODES INC.
- PPAP
- No
- Brand
- Diodes Incorporated
- Width
- 0.85mm
- Series
- DMN26
Цена по запросу
(от 26,39 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 20V 0,23A 3-контактный SOT-523 T/R
Технические параметры
| PPAP | No |
| Brand | Diodes Incorporated |
| Width | 0.85mm |
| Series | DMN26 |
| EU RoHS | Compliant |
| Product | MOSFET Small Signal |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Fall Time | 15.2 ns |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Rise Time | 7.9 ns |
| Automotive | No |
| Lead Shape | Gull-wing |
| Technology | Si |
| Вес, г | 0.01 |
| PCB changed | 3 |
| Part Status | Active |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | Diodes Incorporated |
| Package Type | SOT-523(SC-89) |
| Product Type | MOSFET |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-523-3 |
| Transistor Type | 1 N-Channel |
| Product Category | Small Signal |
| Supplier Package | SOT-523 |
| Number Of Channels | 1 Channel |
| Структура | MOSFET |
| Transistor Material | Si |
| Transistor Polarity | N-Channel |
| Factory Pack Quantity | 3000 |
| Standard Package Name | SOT |
| Pd - Power Dissipation | 300 mW |
| Typical Fall Time (ns) | 15.2 |
| Typical Rise Time (ns) | 7.9 |
| Особенности | однопереходный |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 300 mW |
| Vgs - Gate-Source Voltage | 4.5 V |
| Typical Turn-On Delay Time | 3.8 ns |
| Maximum Gate Source Voltage | -10 V, +10 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 13.4 ns |
| Maximum Drain Source Voltage | 20 V |
| Id - Continuous Drain Current | 230 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 242 mS |
| Maximum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation (mW) | 300 |
| Maximum Drain Source Resistance | 15 Ω |
| Maximum Gate Source Voltage (V) | ±10 |
| Typical Turn-On Delay Time (ns) | 3.8 |
| Maximum Continuous Drain Current | 230 mA |
| Maximum Drain Source Voltage (V) | 20 |
| Rds On - Drain-Source Resistance | 3 Ohms |
| Typical Turn-Off Delay Time (ns) | 13.4 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.23 |
| Typical Input Capacitance @ Vds (pF) | 14.1 15V |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Maximum Drain Source Resistance (mOhm) | 3000 4.5V |
| Vgs Th - Gate-Source Threshold Voltage | 500 mV |
| Пороговое напряжение на затворе | 1…2.5 В |
| Максимальное напряжение сток-исток Uси,В | 20 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.23 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.3 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |