DMN2400UFB-7, MOSFETs MOSFET BVDSS: 8V-24V X1-DFN1006-3 T&R 3K
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8007344330
- Артикул
- DMN2400UFB-7
- Бренд
- DIODES INC.
- HTS
- 8541.21.00.95
- ECCN
- EAR99
- HTSUS
- 8541.21.0095
- EU RoHS
- Compliant
Цена по запросу
(от 33,84 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
N-канальный 20 В 750 мА (Ta) 470 МВт (Ta) для поверxностного монтажа 3-X1DFN1006
Технические параметры
| HTS | 8541.21.00.95 |
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |
| EU RoHS | Compliant |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| FET Type | N-Channel |
| Military | No |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Vgs (Max) | В±12V |
| Automotive | No |
| Lead Shape | No Lead |
| Technology | MOSFET (Metal Oxide) |
| Вес, г | 556 |
| PCB changed | 3 |
| Part Status | Active |
| RoHS Status | ROHS3 Compliant |
| Channel Mode | Enhancement |
| Channel Type | N |
| REACH Status | REACH Unaffected |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Package Width | 0.6 |
| Package / Case | 3-XFDFN |
| Package Height | 0.47 |
| Package Length | 1 |
| Product Category | Power MOSFET |
| Supplier Package | DFN EP |
| Maximum IDSS (uA) | 0.1 |
| Vgs(th) (Max) @ Id | 900mV @ 250ВµA |
| Структура | MOSFET |
| Base Product Number | DMN2400 -> |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Standard Package Name | DFN |
| Rds On (Max) @ Id, Vgs | 550mOhm @ 600mA, 4.5V |
| Typical Fall Time (ns) | 9.6 |
| Typical Rise Time (ns) | 3.82 |
| Особенности | - |
| Power Dissipation (Max) | 470mW (Ta) |
| Supplier Device Package | 3-X1DFN1006 |
| Number of Elements per Chip | 1 |
| Gate Charge (Qg) (Max) @ Vgs | 0.5nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Maximum Power Dissipation (mW) | 470 |
| Typical Gate Charge @ Vgs (nC) | 0.5@4.5V |
| Maximum Gate Source Voltage (V) | ±12 |
| Typical Turn-On Delay Time (ns) | 4.11 |
| Maximum Drain Source Voltage (V) | 20 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Typical Turn-Off Delay Time (ns) | 14.8 |
| Maximum Gate Threshold Voltage (V) | 0.9 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Input Capacitance (Ciss) (Max) @ Vds | 36pF @ 16V |
| Maximum Continuous Drain Current (A) | 0.75 |
| Typical Input Capacitance @ Vds (pF) | 36@16V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Maximum Drain Source Resistance (mOhm) | 550@4.5V |
| Maximum Gate Source Leakage Current (nA) | 50000 |
| Current - Continuous Drain (Id) @ 25В°C | 750mA (Ta) |
| Пороговое напряжение на затворе | 1…2.5 В |
| Максимальное напряжение сток-исток Uси,В | 8 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.47 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±12В |