DMN2300UFB4-7B, Транзистор N-MOSFET, полевой, 20В, 0,96А, 0,5Вт, DFN1006-3
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- Код товара
- 8066740536
- Артикул
- DMN2300UFB4-7B
- Бренд
- DIODES INC.
- Brand
- Diodes Incorporated
- Width
- 0.65mm
- Series
- DMN2300
- Fall Time
- 13 ns
Цена по запросу
(от 12 ₽)
Минимальный заказ: 10000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand | Diodes Incorporated |
| Width | 0.65mm |
| Series | DMN2300 |
| Fall Time | 13 ns |
| Packaging | Cut Tape or Reel |
| Pin Count | 3 |
| Rise Time | 2.8 ns |
| Technology | Si |
| Вес, г | 0.03 |
| Subcategory | MOSFETs |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | Diodes Incorporated |
| Package Type | X2-DFN1006 |
| Product Type | MOSFET |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT |
| Package / Case | X2-DFN1006-3 |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 1.6 nC |
| Number Of Channels | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | N-Channel |
| Factory Pack Quantity | 10000 |
| Pd - Power Dissipation | 500 mW |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 500 mW |
| Typical Gate Charge @ Vgs | 1.6 nC @ 4.5 V |
| Vgs - Gate-Source Voltage | 4.5 V |
| Typical Turn-On Delay Time | 3.5 ns |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 38 ns |
| Maximum Drain Source Voltage | 20 V |
| Id - Continuous Drain Current | 1.3 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Maximum Gate Threshold Voltage | 0.95V |
| Maximum Drain Source Resistance | 500 mΩ |
| Maximum Continuous Drain Current | 1.3 A |
| Rds On - Drain-Source Resistance | 175 mOhms |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Vgs Th - Gate-Source Threshold Voltage | 450 mV |