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DMN21D2UFB-7B, null 760mA 380mW 990mOhm@100mA,4.5V null X1-DFN1006-3 MOSFETs

DMN21D2UFB-7B, null 760mA 380mW 990mOhm@100mA,4.5V null X1-DFN1006-3 MOSFETs

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Код товара
8070202011
Артикул
DMN21D2UFB-7B
Бренд
DIODES INC.
PPAP
No
EU RoHS
Compliant
Mounting
Surface Mount
ECCN (US)
EAR99
Цена по запросу
(от 49 ₽)
Минимальный заказ: 5 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Транзистор MOSFET N-CH 20V 0,76A с 3-контактным разъемом DFN T/R

Технические параметры

PPAPNo
EU RoHSCompliant
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeNo Lead
Вес, г0.01
PCB changed3
Part StatusActive
Channel ModeEnhancement
Channel TypeN
ConfigurationSingle
Product CategoryPower MOSFET
Supplier PackageDFN
Standard Package NameDFN
Power Dissipation (Pd)380mW
Typical Fall Time (ns)6.4
Typical Rise Time (ns)3.3
Total Gate Charge (Qg@Vgs)930pC@10V
Number of Elements per Chip1
Input Capacitance (Ciss@Vds)27.6pF@16V
Continuous Drain Current (Id)760mA
Maximum Power Dissipation (mW)900
Typical Gate Charge @ 10V (nC)0.86
Typical Gate Charge @ Vgs (nC)0.86@10V|0.47@4.5V
Maximum Gate Source Voltage (V)±12
Typical Turn-On Delay Time (ns)4
Maximum Drain Source Voltage (V)20
Typical Turn-Off Delay Time (ns)19
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Continuous Drain Current (A)0.76
Typical Input Capacitance @ Vds (pF)27.6@16V
Maximum Drain Source Resistance (mOhm)990@4.5V

Техническая документация