DMN2075UDW-7, Trans MOSFET N-CH 20V 2.8A 6-Pin SOT-363 T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001038589
- Артикул
- DMN2075UDW-7
- Бренд
- DIODES INC.
- PPAP
- No
- Type
- 1PCSNChannel
- Brand:
- Diodes Incorporated
- EU RoHS
- Compliant
Цена по запросу
(от 17 ₽)
Минимальный заказ: 1900 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 20V 2.8A 6-контактный SOT-363 T/R
Технические параметры
| PPAP | No |
| Type | 1PCSNChannel |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant |
| Series: | DMN2075 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Fall Time: | 6.7 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 9.8 ns |
| Вес, г | 1 |
| PCB changed | 6 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | MOSFETs |
| Корпус | SOT-363 |
| Channel Mode: | Enhancement |
| Configuration | Single Quad Drain |
| Manufacturer: | Diodes Incorporated |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-363-6 |
| Product Category | Power MOSFET |
| Supplier Package | SOT-363 |
| Transistor Type: | 1 N-Channel |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 7 nC |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Standard Package Name | SOT |
| Power Dissipation (Pd) | 500mW |
| Typical Fall Time (ns) | 6.7 |
| Typical Rise Time (ns) | 9.8 |
| Особенности | - |
| Pd - Power Dissipation: | 500 mW |
| Total Gate Charge (Qg@Vgs) | 7nC@4.5V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 7.4 ns |
| Input Capacitance (Ciss@Vds) | 594.3pF@10V |
| Typical Turn-Off Delay Time: | 28.1 ns |
| Continuous Drain Current (Id) | 2.8A |
| Id - Continuous Drain Current: | 2.8 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 580 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ Vgs (nC) | 7 4.5V |
| Forward Transconductance - Min: | 13 S |
| Maximum Gate Source Voltage (V) | ±8 |
| Typical Turn-On Delay Time (ns) | 7.4 |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 28.1 |
| Rds On - Drain-Source Resistance: | 48 mOhms |
| Maximum Gate Threshold Voltage (V) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 2.8 |
| Typical Input Capacitance @ Vds (pF) | 594.3 10V |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Maximum Drain Source Resistance (mOhm) | 48 4.5V |
| Vgs th - Gate-Source Threshold Voltage: | 400 mV |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Пороговое напряжение на затворе | 1…2.5 В |
| Максимальное напряжение сток-исток Uси,В | 20 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 2.8 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.58 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±12В |