DMN2020LSN-7, Транзистор: N-MOSFET; полевой
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8073829008
- Артикул
- DMN2020LSN-7
- Бренд
- DIODES INC.
- Case
- SC59
- Brand:
- Diodes Incorporated
- Series:
- DMN2020
- Version
- ESD
Цена по запросу
(от 24 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET; полевой
Технические параметры
| Case | SC59 |
| Brand: | Diodes Incorporated |
| Series: | DMN2020 |
| Version | ESD |
| Mounting | SMD |
| Product: | MOSFET Small Signal |
| Fall Time: | 12.33 ns |
| Rise Time: | 12.49 ns |
| Вес, г | 0.03 |
| Technology: | Si |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Drain current | 4.5A |
| Manufacturer: | Diodes Incorporated |
| Product Type: | MOSFET |
| Configuration: | Single |
| Kind of channel | enhancement |
| Kind of package | reel, tape |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Transistor Type: | 1 N-Channel |
| Power dissipation | 0.61W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 11.6 nC |
| Type of transistor | N-MOSFET |
| Gate-source voltage | ±12V |
| Number of Channels: | 1 Channel |
| On-state resistance | 20mΩ |
| Drain-source voltage | 20V |
| Pulsed drain current | 30A |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 610 mW |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Typical Turn-On Delay Time: | 11.67 ns |
| Typical Turn-Off Delay Time: | 35.89 ns |
| Id - Continuous Drain Current: | 6.9 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 13 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 500 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |