DMN2011UFDE-7, Trans MOSFET N-CH 20V 11.7A 6-Pin UDFN EP T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8002414915
- Артикул
- DMN2011UFDE-7
- Бренд
- DIODES INC.
- PPAP
- No
- Brand:
- Diodes Incorporated
- EU RoHS
- Compliant
- Series:
- DMN2011
Цена по запросу
(от 57 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 20V 11,7A с 6-контактным разъемом UDFN EP T/R
Технические параметры
| PPAP | No |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant |
| Series: | DMN2011 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Fall Time: | 13.5 ns |
| Lead Shape | No Lead |
| Rise Time: | 2.6 ns |
| Вес, г | 1 |
| PCB changed | 6 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single Quad Drain |
| Manufacturer: | Diodes Incorporated |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | DFN-2020-6 |
| Supplier Package | UDFN EP |
| Transistor Type: | 1 N-Channel |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 56 nC |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Standard Package Name | DFN |
| Typical Fall Time (ns) | 13.5 |
| Typical Rise Time (ns) | 2.6 |
| Особенности | - |
| Pd - Power Dissipation: | 1.97 W |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 3.6 ns |
| Typical Turn-Off Delay Time: | 21.6 ns |
| Id - Continuous Drain Current: | 11.7 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 1970 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 56 |
| Typical Gate Charge @ Vgs (nC) | 24@4.5V|56@10V |
| Maximum Gate Source Voltage (V) | ±12 |
| Typical Turn-On Delay Time (ns) | 3.6 |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 21.6 |
| Rds On - Drain-Source Resistance: | 15 mOhms |
| Maximum Gate Threshold Voltage (V) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 11.7 |
| Typical Input Capacitance @ Vds (pF) | 2248@10V |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Maximum Drain Source Resistance (mOhm) | 9.5@4.5V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Пороговое напряжение на затворе | 1…2.5 В |
| Максимальное напряжение сток-исток Uси,В | 20 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 11.7 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±12В |