DMN2005LP4K-7, Trans MOSFET N-CH 20V 0.3A 3-Pin X2-DFN T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8000998174
- Артикул
- DMN2005LP4K-7
- Бренд
- DIODES INC.
- PPAP
- No
- Type
- 1PCSNChannel
- Brand:
- Diodes Incorporated
- EU RoHS
- Compliant
Цена по запросу
(от 24 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 20V 0.3A с 3-контактным разъемом DFN T/R
Технические параметры
| PPAP | No |
| Type | 1PCSNChannel |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant |
| Series: | DMN2005 |
| Mounting | Surface Mount |
| Product: | MOSFET Small Signal |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | No Lead |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | X2-DFN1006-3 |
| Product Category | Small Signal |
| Supplier Package | DFN |
| Transistor Type: | 1 N-Channel |
| Maximum IDSS (uA) | 10 |
| Product Category: | MOSFET |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Standard Package Name | DFN |
| Power Dissipation (Pd) | 400mW |
| Особенности | - |
| Pd - Power Dissipation: | 400 mW |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 4.06 ns |
| Input Capacitance (Ciss@Vds) | 41pF@3V |
| Typical Turn-Off Delay Time: | 13.7 ns |
| Continuous Drain Current (Id) | 200mA |
| Id - Continuous Drain Current: | 300 mA |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 400 |
| Minimum Operating Temperature: | -65 C |
| Forward Transconductance - Min: | 40 mS |
| Maximum Gate Source Voltage (V) | ±10 |
| Maximum Drain Source Voltage (V) | 20 |
| Rds On - Drain-Source Resistance: | 650 mOhms |
| Maximum Gate Threshold Voltage (V) | 0.9 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Continuous Drain Current (A) | 0.3 |
| Typical Input Capacitance @ Vds (pF) | 37.1@10V |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Maximum Drain Source Resistance (mOhm) | 1500@4V |
| Vgs th - Gate-Source Threshold Voltage: | 530 mV |
| Maximum Gate Source Leakage Current (nA) | 5000 |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Максимальное напряжение сток-исток Uси,В | 20 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.3 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.4 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±12В |