DMN2004DMK-7, Trans MOSFET N-CH 20V 0.54A 6-Pin SOT-26 T/R
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- Код товара
- 8001060374
- Артикул
- DMN2004DMK-7
- Бренд
- DIODES INC.
- PPAP
- No
- Brand:
- Diodes Incorporated
- EU RoHS
- Compliant
- Series:
- DMN2004
Цена по запросу
(от 37 ₽)
Минимальный заказ: 820 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 20V 0,54A 6-контактный SOT-26 T/R
Технические параметры
| PPAP | No |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant |
| Series: | DMN2004 |
| Mounting | Surface Mount |
| Product: | MOSFET Small Signal |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 6 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Dual |
| Manufacturer: | Diodes Incorporated |
| Package/Case: | SOT-26-6 |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Product Category | Small Signal |
| Supplier Package | SOT-26 |
| Transistor Type: | 2 N-Channel |
| Product Category: | MOSFET |
| Структура | N-Channel |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | N-Channel |
| Standard Package Name | SOT |
| Особенности | - |
| Pd - Power Dissipation: | 225 mW |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Number of Elements per Chip | 2 |
| Id - Continuous Drain Current: | 540 mA |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 225 |
| Minimum Operating Temperature: | -65 C |
| Maximum Gate Source Voltage (V) | ±8 |
| Maximum Drain Source Voltage (V) | 20 |
| Rds On - Drain-Source Resistance: | 550 mOhms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Continuous Drain Current (A) | 0.54 |
| Typical Input Capacitance @ Vds (pF) | 150(Max)16V |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Maximum Drain Source Resistance (mOhm) | 550 4.5V |
| Vgs th - Gate-Source Threshold Voltage: | 500 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Пороговое напряжение на затворе | 3V@250uA |
| Максимальное напряжение сток-исток Uси,В | 20 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.54 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.225 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±12В |