DMJT9435-13, Bipolar Transistors - BJT LOW VSAT PNP SMT
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005059128
- Артикул
- DMJT9435-13
- Бренд
- DIODES INC.
- Brand:
- Diodes Incorporated
- Series:
- DMJT9435
- Вес, г
- 0.11
- Technology:
- Si
Цена по запросу
(от 91 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Diodes Incorporated |
| Series: | DMJT9435 |
| Вес, г | 0.11 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | Diodes Incorporated |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-223-4 |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Polarity: | PNP |
| Pd - Power Dissipation: | 2 W |
| DC Current Gain hFE Max: | 125 |
| Gain Bandwidth Product fT: | 160 MHz |
| Emitter- Base Voltage VEBO: | 6 V |
| Collector- Base Voltage VCBO: | 45 V |
| Maximum DC Collector Current: | 3 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 90 at 3 A, 1 V |
| Collector- Emitter Voltage VCEO Max: | 30 V |
| Collector-Emitter Saturation Voltage: | 550 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |