DMG7401SFG-7, Транзистор: P-MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062409950
- Артикул
- DMG7401SFG-7
- Бренд
- DIODES INC.
- PPAP
- No
- Type
- P Channel
- FET Type
- P-Channel
- Mounting
- Surface Mount
Цена по запросу
(от 110,45 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
30 В 9,8 А, 11 Мом при 20 В, 12 А, 940 МВт, 3 В при 250 мкА, P-канал PowerDI3333-8 МОП-транзисторов ROHS
Технические параметры
| PPAP | No |
| Type | P Channel |
| FET Type | P-Channel |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Vgs (Max) | ±25V |
| Automotive | No |
| Lead Shape | No Lead |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 1 |
| PCB changed | 8 |
| Part Status | NRND |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single Quad Drain Triple Source |
| Mounting Type | Surface Mount |
| Package Width | 3.3 mm |
| Package / Case | 8-PowerVDFN |
| Package Length | 3.3 mm |
| Product Category | Power MOSFET |
| Supplier Package | PowerDI EP |
| Maximum IDSS (uA) | 1 |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Operating Temperature | -55°C ~ 150°C(TJ) |
| Standard Package Name | PowerDI |
| Power Dissipation (Pd) | 940mW |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 12A, 20V |
| Typical Fall Time (ns) | 22 |
| Typical Rise Time (ns) | 15.4 |
| Power Dissipation (Max) | 940mW(Ta) |
| Supplier Device Package | POWERDI3333-8 |
| Supplier Temperature Grade | Automotive |
| Total Gate Charge (Qg@Vgs) | 58nC@10V |
| Number of Elements per Chip | 1 |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Input Capacitance (Ciss@Vds) | 2.987nF@15V |
| Continuous Drain Current (Id) | 9.8A |
| Drain to Source Voltage (Vdss) | 30 V |
| Maximum Power Dissipation (mW) | 2200 |
| Typical Gate Charge @ 10V (nC) | 41 |
| Typical Gate Charge @ Vgs (nC) | 41@10V|20.5@4.5V |
| Maximum Gate-Source Voltage (V) | ±25 |
| Typical Turn-On Delay Time (ns) | 11.3 |
| Maximum Drain-Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 38 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Input Capacitance (Ciss) (Max) @ Vds | 2987 pF @ 15 V |
| Maximum Continuous Drain Current (A) | 9.8 |
| Typical Input Capacitance @ Vds (pF) | 2246@15V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 20V |
| Maximum Drain-Source Resistance (mOhm) | 11@20V |
| Current - Continuous Drain (Id) @ 25°C | 9.8A(Ta) |
| Maximum Gate-Source Leakage Current (nA) | 10000 |