DMG4800LSD-13, Trans MOSFET N-CH 30V 7.5A 8-Pin SO T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001041397
- Артикул
- DMG4800LSD-13
- Бренд
- DIODES INC.
- PPAP
- No
- Width
- 3.95mm
- Brand:
- Diodes Incorporated
- EU RoHS
- Compliant
Цена по запросу
(от 36 ₽)
Минимальный заказ: 2500 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор N-MOSFET x2, полевой, 30В, 6А, 1,5Вт, SO8 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| PPAP | No |
| Width | 3.95mm |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant |
| Series: | DMG4800 |
| Mounting | Surface Mount |
| Product: | MOSFET Small Signal |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Fall Time: | 8.55 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 4.5 ns |
| Вес, г | 1 |
| PCB changed | 8 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOIC |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Dual Dual Drain |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOIC-8 |
| Product Category | Power MOSFET |
| Supplier Package | SO |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 8.56 nC |
| Структура | N-Channel |
| Number of Channels: | 2 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Standard Package Name | SO |
| Typical Fall Time (ns) | 8.55 |
| Typical Rise Time (ns) | 4.5 |
| Особенности | - |
| Pd - Power Dissipation: | 1.17 W |
| Transistor Configuration | Isolated |
| Maximum Power Dissipation | 1.5 W |
| Typical Gate Charge @ Vgs | 8.56 nC @ 5 V |
| Supplier Temperature Grade | Automotive |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Number of Elements per Chip | 2 |
| Typical Turn-On Delay Time: | 5.03 ns |
| Maximum Drain Source Voltage | 30 V |
| Typical Turn-Off Delay Time: | 26.33 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 7.5 A |
| Maximum Gate Threshold Voltage | 1.6V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 1500 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ Vgs (nC) | 8.56@5V |
| Maximum Drain Source Resistance | 22 mΩ |
| Maximum Gate Source Voltage (V) | ±25 |
| Typical Turn-On Delay Time (ns) | 5.03 |
| Maximum Continuous Drain Current | 7.5 A |
| Maximum Drain Source Voltage (V) | 30 |
| Typical Turn-Off Delay Time (ns) | 26.33 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 7.5 |
| Typical Input Capacitance @ Vds (pF) | 798@10V |
| Maximum Drain Source Resistance (mOhm) | 16@10V |
| Vgs th - Gate-Source Threshold Voltage: | 800 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 7.5 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±12В |