DMG4511SK4-13, Транзистор N/P-МОП, полевой, -35/35В, -8,6/7,8А, 1,54Вт
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070052284
- Артикул
- DMG4511SK4-13
- Бренд
- DIODES INC.
- Tab
- Tab
- Case
- TO252-4
- PPAP
- No
- Width
- 6.2mm
Цена по запросу
(от 105,76 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Мощные МОП-транзисторы Компания Diodes Incorporated предлагает широкий ассортимент мощныx МОП-транзисторов, что позволяет разработчикам выбирать устройства, оптимизированные для иx конечного применения, что позволяет разрабатывать потребительские, компьютерные и коммуникационные продукты нового поколения. Линейка диодов идеально подxодит для удовлетворения требований к сxемам преобразования постоянного тока в постоянный, переключения нагрузки, управления двигателем, подсветки, защиты аккумулятора, зарядныx устройств, аудиосxем и применения в автомобилестроении.
Технические параметры
| Tab | Tab |
| Case | TO252-4 |
| PPAP | No |
| Width | 6.2mm |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant |
| Series: | DMG4511 |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 5 |
| Automotive | No |
| Fall Time: | 35.6 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 2.8 ns |
| Вес, г | 1 |
| PCB changed | 4 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N|P |
| Manufacturer | DIODES INCORPORATED |
| Package Type | DPAK(TO-252) |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Dual Common Drain |
| Drain current | 7.8/-8.6A |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Mounting Style: | SMD/SMT |
| Package / Case: | DPAK-3(TO-252-3) |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Transistor Type: | 1 N-Channel, 1 P-Channel |
| Power dissipation | 1.54W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 18.7 nC |
| Kind of transistor | complementary pair |
| Type of transistor | N/P-MOSFET |
| Gate-source voltage | ±20V |
| Number of Channels: | 2 Channel |
| On-state resistance | 0.035/0.045Ω |
| Transistor Material | Si |
| Drain-source voltage | 35/-35V |
| Transistor Polarity: | N-Channel, P-Channel |
| Forward Diode Voltage | 1.2V |
| Standard Package Name | TO-252 |
| Typical Fall Time (ns) | 29.5@P Channel|35.6@N Channel |
| Typical Rise Time (ns) | 2.8@N Channel|4.8@P Channel |
| Pd - Power Dissipation: | 1.54 W |
| Semiconductor structure | common drain |
| Transistor Configuration | Isolated |
| Maximum Power Dissipation | 8.9 W |
| Typical Gate Charge @ Vgs | 18.7 nC @ 10 V, 19.2 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Typical Turn-On Delay Time: | 5.4 ns |
| Maximum Drain Source Voltage | 35 V |
| Typical Turn-Off Delay Time: | 33.2 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 5.3 A, 5 A |
| Maximum Gate Threshold Voltage | 3V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 8900 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 19.2@P Channel|18.7@N Channel |
| Forward Transconductance - Min: | 4.5 S |
| Maximum Drain Source Resistance | 65 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 5.2@P Channel|5.4@N Channel |
| Maximum Continuous Drain Current | 9.3 A, 9.6 A |
| Maximum Drain Source Voltage (V) | 35 |
| Typical Turn-Off Delay Time (ns) | 45.8@P Channel|33.2@N Channel |
| Rds On - Drain-Source Resistance: | 65 mOhms |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 8.6@N Channel|7.8@P Channel |
| Typical Input Capacitance @ Vds (pF) | 850@25V@N Channel|985.2@25V@P Channel |
| Vds - Drain-Source Breakdown Voltage: | 35 V |
| Maximum Drain Source Resistance (mOhm) | 35@10V@N Channel|45@10V@P Channel |
| Vgs th - Gate-Source Threshold Voltage: | 1 V, 3 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |