DMG3414U-7, Транзистор N-MOSFET, полевой, 20В, 3,2А, 780мВт, SOT23
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- Код товара
- 8017538212
- Артикул
- DMG3414U-7
- Бренд
- DIODES INC.
- PPAP
- No
- Width
- 1.4mm
- Brand:
- Diodes Incorporated
- EU RoHS
- Compliant
Цена по запросу
(от 99,40 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 20V 4.2A с 3-контактным разъемом SOT-23 T/R
Технические параметры
| PPAP | No |
| Width | 1.4mm |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant |
| Series: | DMG3414 |
| Mounting | Surface Mount |
| Product: | MOSFET Small Signal |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 9.6 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 8.3 ns |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SOT-23 |
| Subcategory: | MOSFETs |
| Корпус | sot23 |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Product Category | Power MOSFET |
| Supplier Package | SOT-23 |
| Transistor Type: | 1 N-Channel |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 9.6 nC |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Standard Package Name | SOT-23 |
| Typical Fall Time (ns) | 9.6 |
| Typical Rise Time (ns) | 8.3 |
| Особенности | - |
| Pd - Power Dissipation: | 780 mW |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 780 mW |
| Typical Gate Charge @ Vgs | 9.6 nC @ 4.5 V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 8.1 ns |
| Maximum Drain Source Voltage | 20 V |
| Typical Turn-Off Delay Time: | 40.1 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 4.2 A |
| Maximum Gate Threshold Voltage | 0.9V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 780 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ Vgs (nC) | 9.6 4.5V |
| Maximum Drain Source Resistance | 37 mΩ |
| Maximum Gate Source Voltage (V) | ±8 |
| Typical Turn-On Delay Time (ns) | 8.1 |
| Maximum Continuous Drain Current | 4.2 A |
| Maximum Drain Source Voltage (V) | 20 |
| Typical Turn-Off Delay Time (ns) | 40.1 |
| Rds On - Drain-Source Resistance: | 25 mOhms |
| Maximum Gate Threshold Voltage (V) | 0.9 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 4.2 |
| Typical Input Capacitance @ Vds (pF) | 829.9 10V |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Maximum Drain Source Resistance (mOhm) | 25 4.5V |
| Vgs th - Gate-Source Threshold Voltage: | 500 mV |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Пороговое напряжение на затворе | 1…2.5 В |
| Максимальное напряжение сток-исток Uси,В | 20 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 3.2 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.78 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |