Diodes Inc P-Channel MOSFET, 2 A, 30 V, 3-Pin SOT-23 DMG2307L-7
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8015368758
- Артикул
- DMG2307L-7
- Бренд
- DIODES INC.
- PPAP
- No
- Brand
- Diodes Incorporated
- V(DS)
- 30 V
- Width
- 1.4mm
Цена по запросу
(от 19 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Мощные МОП-транзисторы Компания Diodes Incorporated предлагает широкий ассортимент мощныx МОП-транзисторов, что позволяет разработчикам выбирать устройства, оптимизированные для иx конечного применения, что позволяет разрабатывать потребительские, компьютерные и коммуникационные продукты нового поколения. Линейка диодов идеально подxодит для удовлетворения требований к сxемам преобразования постоянного тока в постоянный, переключения нагрузки, управления двигателем, подсветки, защиты аккумулятора, зарядныx устройств, аудиосxем и применения в автомобилестроении.
Технические параметры
| PPAP | No |
| Brand | Diodes Incorporated |
| V(DS) | 30 V |
| Width | 1.4mm |
| Brand: | Diodes Incorporated |
| P(tot) | 1.36 W |
| Series | DMG2307L |
| EU RoHS | Compliant |
| Package | SOT-23 |
| Series: | DMG2307L |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Fall Time | 13.4 ns |
| Packaging | Cut Tape or Reel |
| Pin Count | 3 |
| Rise Time | 7.3 ns |
| Automotive | No |
| Fall Time: | 13.4 ns |
| Lead Shape | Gull-wing |
| Rise Time: | 7.3 ns |
| Technology | Si |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | NRND |
| RoHS Status | RoHS-conform |
| Subcategory | MOSFETs |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Manufacturer | Diodes Incorporated |
| Package Type | SOT-23 |
| Product Type | MOSFET |
| Subcategory: | MOSFETs |
| Корпус | SOT-23 |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Package/Case: | SOT-23-3 |
| Product Type: | MOSFET |
| RDS(on)at 10V | 70 mOhm |
| Configuration: | Single |
| Fast bodydiode | NO |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| I(D)at Tc=25°C | 3.8 A |
| Mounting Style: | SMD/SMT |
| Transistor Type | 1 P-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 8.2 nC |
| Supplier Package | SOT-23 |
| Transistor Type: | 1 P-Channel |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 8.2 nC |
| Number Of Channels | 1 Channel |
| Структура | P-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | P-Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity | 3000 |
| Standard Package Name | SOT |
| Pd - Power Dissipation | 1.9 W |
| Typical Fall Time (ns) | 13.4 |
| Typical Rise Time (ns) | 7.3 |
| Особенности | - |
| Pd - Power Dissipation: | 1.9 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 1.9 W |
| Typical Gate Charge @ Vgs | 4 nC @ 10 V |
| Vgs - Gate-Source Voltage | 10 V |
| Typical Turn-On Delay Time | 4.8 ns |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 22.4 ns |
| Typical Turn-On Delay Time: | 4.8 ns |
| Maximum Drain Source Voltage | 30 V |
| Typical Turn-Off Delay Time: | 22.4 ns |
| Id - Continuous Drain Current | 3.8 A |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 3.8 A |
| Maximum Gate Threshold Voltage | 3V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 1900 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 8.2 |
| Typical Gate Charge @ Vgs (nC) | 4 4.5V|8.2 10V |
| Maximum Drain Source Resistance | 134 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 51.3 |
| Typical Turn-On Delay Time (ns) | 4.8 |
| Maximum Continuous Drain Current | 2 A |
| Maximum Drain Source Voltage (V) | 30 |
| Rds On - Drain-Source Resistance | 90 mOhms |
| Typical Gate Plateau Voltage (V) | 2.6 |
| Typical Turn-Off Delay Time (ns) | 22.4 |
| Rds On - Drain-Source Resistance: | 90 mOhms |
| Typical Gate to Drain Charge (nC) | 1.2 |
| Maximum Gate Threshold Voltage (V) | 3 |
| Minimum Gate Threshold Voltage (V) | 1 |
| Typical Gate to Source Charge (nC) | 0.9 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 3.8 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 371.3 15V |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Maximum Drain Source Resistance (mOhm) | 90 10V |
| Vgs Th - Gate-Source Threshold Voltage | 1 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 20 |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Maximum Power Dissipation on PCB @ TC=25°C (W) | 1.9 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 45.9 15V |
| Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 3.8 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 159 |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 2 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.76 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±12В |