DMG1013UW-7, Trans MOSFET P-CH 20V 0.82A 3-Pin SOT-323 T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001116436
- Артикул
- DMG1013UW-7
- Бренд
- DIODES INC.
- PPAP
- No
- Width
- 1.35mm
- EU RoHS
- Compliant
- Mounting
- Surface Mount
Цена по запросу
(от 11 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор P-MOSFET, полевой, -20В, -0,54А, 310мВт, SOT323
Технические параметры
| PPAP | No |
| Width | 1.35mm |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | SOT-323 |
| Корпус | sot-323 |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Product Category | Power MOSFET |
| Supplier Package | SOT-323 |
| Структура | MOSFET |
| Transistor Material | Si |
| Transistor Polarity | P Channel |
| Standard Package Name | SOT-323 |
| Typical Fall Time (ns) | 20.7 |
| Typical Rise Time (ns) | 8.1 |
| Особенности | - |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 310 mW |
| Typical Gate Charge @ Vgs | 0.62 nC @ 4.5 V |
| Vgs - Gate-Source Voltage | 1V @ 250uA |
| Maximum Gate Source Voltage | -6 V, +6 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 20 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Gate Threshold Voltage | 1V |
| Maximum Power Dissipation (mW) | 310 |
| Typical Gate Charge @ Vgs (nC) | 0.6224 4.5V |
| Maximum Drain Source Resistance | 1.5 Ω |
| Maximum Gate Source Voltage (V) | ±6 |
| Typical Turn-On Delay Time (ns) | 5.1 |
| Maximum Continuous Drain Current | 820 mA |
| Maximum Drain Source Voltage (V) | 20 |
| Rds On - Drain-Source Resistance | 750mО© @ 430mA,4.5V |
| Typical Turn-Off Delay Time (ns) | 28.4 |
| Power Dissipation-Max (Ta=25В°C) | 310mW |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 0.82 |
| Typical Input Capacitance @ Vds (pF) | 59.76 16V |
| Vds - Drain-Source Breakdown Voltage | 20V |
| Maximum Drain Source Resistance (mOhm) | 750 4.5V |
| Continuous Drain Current (Id) @ 25В°C | 820mA |
| Пороговое напряжение на затворе | 1…2.5 В |
| Максимальное напряжение сток-исток Uси,В | 20 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.82 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.31 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±12В |