DMG1012UW-7, Транзистор МОП n-канальный, полевой, 20В, 1А, 290мВт, SOT323
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8010430160
- Артикул
- DMG1012UW-7
- Бренд
- DIODES INC.
- Brand
- Diodes Incorporated
- Width
- 1.35mm
- Brand:
- Diodes Incorporated
- Series
- DMG1012
Цена по запросу
(от 17 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор МОП n-канальный, полевой, 20В, 1А, 290мВт, SOT323
Технические параметры
| Brand | Diodes Incorporated |
| Width | 1.35mm |
| Brand: | Diodes Incorporated |
| Series | DMG1012 |
| Product | MOSFET Small Signal |
| Series: | DMG1012 |
| Product: | MOSFET Small Signal |
| Fall Time | 12.3 ns |
| Packaging | Cut Tape or Reel |
| Pin Count | 3 |
| Rise Time | 7.4 ns |
| Fall Time: | 12.3 ns |
| Rise Time: | 7.4 ns |
| Technology | Si |
| Вес, г | 0.02 |
| Subcategory | MOSFETs |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | Diodes Incorporated |
| Package Type | SOT-323 |
| Product Type | MOSFET |
| Subcategory: | MOSFETs |
| Корпус | SOT323 |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-323-3 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-323-3 |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 736.6 pC |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 736.6 pC |
| Number Of Channels | 1 Channel |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | N-Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 3000 |
| Pd - Power Dissipation | 290 mW |
| Особенности | - |
| Pd - Power Dissipation: | 290 mW |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 290 mW |
| Typical Gate Charge @ Vgs | 0.737 nC @ 4.5 V |
| Vgs - Gate-Source Voltage | 4.5 V |
| Typical Turn-On Delay Time | 5.1 ns |
| Maximum Gate Source Voltage | -6 V, +6 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 26.7 ns |
| Typical Turn-On Delay Time: | 5.1 ns |
| Maximum Drain Source Voltage | 20 V |
| Typical Turn-Off Delay Time: | 26.7 ns |
| Id - Continuous Drain Current | 1 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Id - Continuous Drain Current: | 1 A |
| Maximum Gate Threshold Voltage | 1V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 750 mΩ |
| Maximum Continuous Drain Current | 1 A |
| Rds On - Drain-Source Resistance | 450 mOhms |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Vgs Th - Gate-Source Threshold Voltage | 500 mV |
| Vgs th - Gate-Source Threshold Voltage: | 500 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Пороговое напряжение на затворе | -6 V, +6 V |
| Максимальное напряжение сток-исток Uси,В | 20 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 1 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.29 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 450 mOhms |