Diodes Inc N/P-Channel MOSFET, 4.2 A, 5.8 A, 40 V, 8-Pin SOIC DMC4050SSDQ-13
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8024716334
- Артикул
- DMC4050SSDQ-13
- Бренд
- DIODES INC.
- PPAP
- Yes
- Brand:
- Diodes Incorporated
- EU RoHS
- Compliant
- Mounting
- Surface Mount
Цена по запросу
(от 168,68 ₽)
Минимальный заказ: 10 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Устройства DiodesZetex разработаны с учетом строгиx требований автомобильной промышленности. Это экологически чистое устройство, не содержащее свинца, галогенов и сурьмы.
Технические параметры
| PPAP | Yes |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 8 |
| Part Status | NRND |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N, P |
| Package Type | SOIC |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Dual Dual Drain |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOIC-8 |
| Product Category | Power MOSFET |
| Supplier Package | SO |
| Maximum IDSS (uA) | 1 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 37.56 nC, 33.66 nC |
| Структура | P-Channel |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | N-Channel, P-Channel |
| Standard Package Name | SO |
| Typical Fall Time (ns) | 5.27@N Channel|30.86@P Channel |
| Typical Rise Time (ns) | 15.14@N Channel|14.72@P Channel |
| Особенности | комплементарная пара транзисторов |
| Pd - Power Dissipation: | 2.14 W |
| Supplier Temperature Grade | Automotive |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 40 V |
| Id - Continuous Drain Current: | 5.8 A |
| Maximum Gate Threshold Voltage | 1.8 V, 1.8 V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 2140@N Channel|17200@P Channel |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ 10V (nC) | 37.56@N Channel|33.66@P Channel |
| Typical Gate Charge @ Vgs (nC) | 37.56@10V@N Channel|33.66@10V@P Channel |
| Maximum Drain Source Resistance | 0.06 Ω |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 8.08@N Channel|6.85@P Channel |
| Maximum Continuous Drain Current | 4.2 A, 5.8 A |
| Maximum Drain Source Voltage (V) | 40 |
| Typical Turn-Off Delay Time (ns) | 24.29@N Channel|53.65@P Channel |
| Rds On - Drain-Source Resistance: | 45 mOhms |
| Maximum Gate Threshold Voltage (V) | 1.8 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 5.3 |
| Typical Input Capacitance @ Vds (pF) | 1790.8@20V@N Channel|1643.17@20V@P Channel |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Maximum Drain Source Resistance (mOhm) | 45@10V |
| Vgs th - Gate-Source Threshold Voltage: | 800 mV, 1.8 V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Максимальное напряжение сток-исток Uси,В | 40 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 4.2 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 1.8 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |