Моя заявка (0)

DDTC143ZE-7-F, 80@10mA,5V 300mV@5mA,250uA 1 NPN - Pre Biased 250MHz 150mW 100mA 50V 500nA SOT-523-3 Digital Transistors

DDTC143ZE-7-F, 80@10mA,5V 300mV@5mA,250uA 1 NPN - Pre Biased 250MHz 150mW 100mA 50V 500nA SOT-523-3 Digital Transistors

Изображения служат только для ознакомления, см. техническую документацию

Код товара
8017625834
Артикул
DDTC143ZE-7-F
Бренд
DIODES INC.
PPAP
No
Type
NPN
Brand:
Diodes Incorporated
EU RoHS
Compliant
Цена по запросу
(от 7,30 ₽)
Минимальный заказ: 10 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Trans Digital BJT NPN 50 В 100 мА 150 МВт 3-контактный SOT-523 T/R

Технические параметры

PPAPNo
TypeNPN
Brand:Diodes Incorporated
EU RoHSCompliant
Series:DDTC143
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
Вес, г0.03
PCB changed3
Part StatusActive
Subcategory:Transistors
ConfigurationSingle
Manufacturer:Diodes Incorporated
Product Type:BJTs-Bipolar Transistors-Pre-Biased
Configuration:Single
Mounting Style:SMD/SMT
Package / Case:SOT-523-3
Supplier PackageSOT-523
Product Category:Bipolar Transistors-Pre-Biased
Transistor Polarity:NPN
Standard Package NameSOT
Typical Resistor Ratio0.1
Minimum DC Current Gain80@10mA@5V
Pd - Power Dissipation:150 mW
Typical Input Resistor:4.7 kOhms
Typical Resistor Ratio:0.1
DC Current Gain hFE Max:80
Peak DC Collector Current:100 mA
Continuous Collector Current:0.1 A
Typical Input Resistor (kOhm)4.7
Maximum Operating Temperature:+150 C
Maximum Power Dissipation (mW)150
Minimum Operating Temperature:-55 C
DC Collector/Base Gain hfe Min:80
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Typical Current Gain Bandwidth (MHz)250
Maximum Collector-Emitter Voltage (V)50
Maximum Continuous DC Collector Current (mA)100
Factory Pack Quantity: Factory Pack Quantity:3000

Техническая документация