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DDTC115TE-7-F, 100@1mA,5V 1 NPN - Pre BIased 150mW 100mA 50V 500nA SOT-523 DIgItal TransIstors

DDTC115TE-7-F, 100@1mA,5V 1 NPN - Pre BIased 150mW 100mA 50V 500nA SOT-523 DIgItal TransIstors

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Код товара
8062584231
Артикул
DDTC115TE-7-F
Бренд
DIODES INC.
Type:
NPN Small Signal Surface Mount Transistor
Brand:
Diodes Incorporated
Series:
DDTC115
Вес, г
0.03
Цена по запросу
(от 30,28 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Технические параметры

Type:NPN Small Signal Surface Mount Transistor
Brand:Diodes Incorporated
Series:DDTC115
Вес, г0.03
Subcategory:Transistors
Manufacturer:Diodes Incorporated
Product Type:BJTs-Bipolar Transistors-Pre-Biased
Configuration:Single
Mounting Style:SMD/SMT
Package / Case:SOT-523-3
Product Category:Bipolar Transistors-Pre-Biased
Transistor Polarity:NPN
Collector Current (Ic)100mA
Power Dissipation (Pd)150mW
Pd - Power Dissipation:150 mW
Typical Input Resistor:100 kOhms
DC Current Gain hFE Max:600
Peak DC Collector Current:100 mA
Emitter- Base Voltage VEBO:5 V
DC Current Gain (hFE@Ic,Vce)100@1mA, 5V
Continuous Collector Current:0.1 A
Maximum Operating Temperature:+150 C
Minimum Operating Temperature:-55 C
DC Collector/Base Gain hfe Min:100
Collector- Emitter Voltage VCEO Max:50 V
Collector-Emitter Breakdown Voltage (Vceo)50V
Factory Pack Quantity: Factory Pack Quantity:3000

Техническая документация