D44VH10G, Транзистор: NPN, биполярный, 100В, 15А, 83Вт, TO220AB
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- Код товара
- 8062340079
- Артикул
- D44VH10G
- Бренд
- ON Semiconductor***
- HTS
- COMPONENTS
- Tab
- Tab
- PPAP
- No
- RoHS
- Details
Цена по запросу
(от 160,09 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: NPN, биполярный, 100В, 15А, 83Вт, TO220AB Характеристики Категория Транзистор Тип биполярный Вид NPN
Технические параметры
| HTS | COMPONENTS |
| Tab | Tab |
| PPAP | No |
| RoHS | Details |
| SVHC | Yes |
| Type | NPN |
| Brand | ON Semiconductor |
| Width | 4.83 mm |
| Brand: | onsemi |
| Height | 15.75 mm |
| Length | 10.53 mm |
| Series | D44VH |
| EU RoHS | Compliant with Exemption |
| Series: | D44VH |
| Material | Si |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Packaging: | Tube |
| Вес, г | 2 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Unit Weight | 0.211644 oz |
| Manufacturer | ON Semiconductor |
| Package Type | TO-220AB |
| Subcategory: | Transistors |
| Корпус | TO-220AB | to-220 |
| Configuration | Single |
| Manufacturer: | onsemi |
| Mounting Type | Through Hole |
| Package Width | 4.83(Max) |
| Package/Case: | TO-220-3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style | Through Hole |
| Package / Case | TO-220-3 |
| Package Height | 9.28(Max) |
| Package Length | 10.53(Max) |
| Mounting Style: | Through Hole |
| Transistor Type | NPN |
| EDA / CAD Models | D44VH10G by Ultra Librarian |
| Product Category | Bipolar Transistors-BJT |
| Supplier Package | TO-220AB |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity | NPN |
| Transistor Polarity: | NPN |
| Factory Pack Quantity | 50 |
| Standard Package Name | TO |
| Pd - Power Dissipation | 83 W |
| SVHC Exceeds Threshold | Yes |
| Minimum DC Current Gain | 20 |
| Pd - Power Dissipation: | 83 W |
| Transistor Configuration | Single |
| Gain Bandwidth Product fT | 50 MHz |
| Maximum Power Dissipation | 83 W |
| Emitter- Base Voltage VEBO | 7 V |
| Gain Bandwidth Product fT: | 50 MHz |
| Emitter- Base Voltage VEBO: | 7 V |
| Maximum Operating Frequency | 20 MHz |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO | 80 V |
| Continuous Collector Current | 15 A |
| Maximum DC Collector Current | 15 A |
| Maximum Emitter Base Voltage | 7 V |
| Continuous Collector Current: | 15 A |
| Maximum DC Collector Current: | 15 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| DC Collector/Base Gain hfe Min | 35 |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 83000 |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hFE Min: | 35 |
| Maximum DC Collector Current (A) | 15 |
| Maximum Emitter Base Voltage (V) | 7 |
| Maximum Collector Emitter Voltage | 80 V |
| Maximum Transition Frequency (MHz) | 50(Typ) |
| Collector- Emitter Voltage VCEO Max | 80 V |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | 80 V |
| Collector-Emitter Saturation Voltage | 0.8 V |
| Operating Junction Temperature (°C) | -55 to 150 |
| Collector-Emitter Saturation Voltage: | 800 mV |
| Maximum Collector-Emitter Voltage (V) | 80 |
| Maximum Base Emitter Saturation Voltage (V) | 1.2@0.4A@8A|1.1@0.4A@8A |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.4@0.4A@8A|0.8@3A@15A |
| Максимальная рассеиваемая мощность ,Вт | 83 |
| Максимально допустимый ток к ( Iк макс.А) | 15 |
| Статический коэффициент передачи тока h21э мин | 20 |
| Граничная частота коэффициента передачи тока fгр.МГц | 50 |
| Макс. напр. к-э при заданном токе к и разомкнутой цепи б.(Uкэо макс),В | 100 | 80 |
| Макс. напр. к-б при заданном обратном токе к и разомкнутой цепи э.(Uкбо макс),В | 80 |