D44H8G, Транзистор: NPN, биполярный, 60В, 10А, 50Вт, TO220AB
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- Код товара
- 8062580978
- Артикул
- D44H8G
- Бренд
- ON Semiconductor***
- HTS
- 8541.29.00.95
- Tab
- Tab
- Case
- TO220AB
- PPAP
- No
Цена по запросу
(от 123,25 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: NPN, биполярный, 60В, 10А, 50Вт, TO220AB Характеристики Категория Транзистор Тип биполярный Вид NPN
Технические параметры
| HTS | 8541.29.00.95 |
| Tab | Tab |
| Case | TO220AB |
| PPAP | No |
| SVHC | Yes |
| Type | NPN |
| EU RoHS | Compliant with Exemption |
| Material | Si |
| Mounting | THT |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Вес, г | 1.97 |
| PCB changed | 3 |
| Part Status | Active |
| Manufacturer | ONSEMI |
| Package Type | TO-220AB |
| Polarisation | bipolar |
| Корпус | TO-220AB |
| Configuration | Single |
| Mounting Type | Through Hole |
| Package Width | 4.83(Max) |
| Package Height | 9.28(Max) |
| Package Length | 10.53(Max) |
| Kind of package | tube |
| Transistor Type | NPN |
| EDA / CAD Models | D44H8G by Ultra Librarian |
| Product Category | Bipolar Power |
| Supplier Package | TO-220AB |
| Collector current | 10A |
| Power dissipation | 50W |
| Type of transistor | NPN |
| Структура | npn |
| Standard Package Name | TO |
| SVHC Exceeds Threshold | Yes |
| Minimum DC Current Gain | 40 |
| Transistor Configuration | Single |
| Collector-emitter voltage | 60V |
| Maximum Power Dissipation | 2 W |
| Maximum Operating Frequency | 50 MHz |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | 10 A |
| Maximum Emitter Base Voltage | 5 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation (mW) | 2000 |
| Maximum DC Collector Current (A) | 10 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Emitter Voltage | 60 V |
| Maximum Transition Frequency (MHz) | 50(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Collector-Emitter Voltage (V) | 60 |
| Maximum Base Emitter Saturation Voltage (V) | 1.5@0.8A@8A |
| Maximum Collector-Emitter Saturation Voltage (V) | 1@0.4A@8A |
| Максимальная рассеиваемая мощность ,Вт | 50 |
| Максимально допустимый ток к ( Iк макс.А) | 10 |