CSD87503Q3E, VSON-8(3.2x3.2) MOSFETs
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062535437
- Артикул
- CSD87503Q3E
- Бренд
- Texas Instruments
- Brand:
- Texas Instruments
- Series:
- CSD87503Q3E
- Military
- No
- Packaging
- Tape and Reel
Цена по запросу
(от 207,26 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
30 В, N-канальный МОП-транзистор NexFET™ с питанием от двуx общиx источников, 3 мм x 3 мм, 21,9 Мом
Технические параметры
| Brand: | Texas Instruments |
| Series: | CSD87503Q3E |
| Military | No |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Fall Time: | 8 ns |
| Rise Time: | 40 ns |
| Technology | MOSFET(Metal Oxide) |
| Tradename: | NexFET |
| Вес, г | 0.08 |
| Power - Max | 15.6W |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Dual Dual Drain Common Source |
| Manufacturer: | Texas Instruments |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Package / Case | 8-PowerVDFN |
| Mounting Style: | SMD/SMT |
| Package / Case: | VSON-8 |
| Supplier Package | VSON EP |
| Transistor Type: | 2 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 42.8 nC |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55°C ~ 150°C(TJ) |
| Standard Package Name | SON |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 6A, 10V |
| Pd - Power Dissipation: | 15.6 W |
| Supplier Device Package | 8-VSON(3.3x3.3) |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Typical Turn-On Delay Time: | 10 ns |
| Gate Charge (Qg) (Max) @ Vgs | 17.4nC @ 4.5V |
| Typical Turn-Off Delay Time: | 25 ns |
| Operating Temperature - (??C) | -55~150 |
| Drain to Source Voltage (Vdss) | 30V |
| Id - Continuous Drain Current: | 10 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 24 S |
| Maximum Power Dissipation - (mW) | 2600 |
| Typical Gate Charge @ 10V - (nC) | 32.9 |
| Typical Gate Charge @ Vgs - (nC) | 13.4@4.5VI32.9@10V |
| Maximum Gate Source Voltage - (V) | ??20 |
| Rds On - Drain-Source Resistance: | 17.3 mOhms |
| Maximum Drain Source Voltage - (V) | 30 |
| Input Capacitance (Ciss) (Max) @ Vds | 1020pF @ 15V |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Maximum Continuous Drain Current - (A) | 10 |
| Typical Input Capacitance @ Vds - (pF) | 782 |
| Current - Continuous Drain (Id) @ 25°C | 10A(Ta) |
| Vgs th - Gate-Source Threshold Voltage: | 1.3 V |
| Maximum Drain Source Resistance - (mOhm) | 16.9@10V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |