CSD87502Q2T, MOSFETs 30-V N channel NexF ET power MOSFET du A A 595-CSD87502Q2
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004997347
- Артикул
- CSD87502Q2T
- Бренд
- Texas Instruments
- ECCN
- EAR99
- Type
- 2 N-Channel
- HTSUS
- 8541.29.0095
- Brand:
- Texas Instruments
Цена по запросу
(от 161,17 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 30В, 5А, 2,3Вт, WSON6, 2x2мм Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| ECCN | EAR99 |
| Type | 2 N-Channel |
| HTSUS | 8541.29.0095 |
| Brand: | Texas Instruments |
| Series | NexFETв„ў -> |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Series: | CSD87502Q2 |
| FET Type | 2 N-Channel (Dual) |
| Fall Time: | 3 ns, 3 ns |
| Rise Time: | 11 ns, 11 ns |
| Tradename: | NexFET |
| Вес, г | 0.01 |
| FET Feature | Logic Level Gate, 5V Drive |
| Power - Max | 2.3W |
| RoHS Status | ROHS3 Compliant |
| Technology: | Si |
| REACH Status | REACH Unaffected |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Texas Instruments |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Dual |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Style: | SMD/SMT |
| Package / Case: | WSON-FET-6 |
| Transistor Type: | 2 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 6 nC |
| Vgs(th) (Max) @ Id | 2V @ 250ВµA |
| Структура | N-Channel |
| Base Product Number | CSD87502 -> |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Power Dissipation (Pd) | 2.3W |
| Rds On (Max) @ Id, Vgs | 32.4mOhm @ 4A, 10V |
| Особенности | - |
| Pd - Power Dissipation: | 2.3 W |
| Supplier Device Package | 6-WSON (2x2) |
| Manufacturer Product Page | http://www.ti.com/general/docs/suppproductinfo.tsp |
| Total Gate Charge (Qg@Vgs) | 6nC@10V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 3 ns, 3 ns |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 10V |
| Input Capacitance (Ciss@Vds) | 353pF@15V |
| Typical Turn-Off Delay Time: | 12 ns, 12 ns |
| Continuous Drain Current (Id) | 5A |
| Drain to Source Voltage (Vdss) | 30V |
| Id - Continuous Drain Current: | 5 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 75 S, 75 S |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Rds On - Drain-Source Resistance: | 35 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 353pF @ 15V |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Current - Continuous Drain (Id) @ 25В°C | 5A |
| Factory Pack Quantity: Factory Pack Quantity: | 250 |
| Пороговое напряжение на затворе | 2V@250uA |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 2.3 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 32.4mΩ@4A, 10V |