CSD87501LT, PicoStar-10 MOSFETs
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017657606
- Артикул
- CSD87501LT
- Бренд
- Texas Instruments
- ECCN
- EAR99
- Type
- 2 N-Channel
- HTSUS
- 8541.29.0095
- Brand:
- Texas Instruments
Цена по запросу
(от 179 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
2,5 Вт 2.3V@250uA 2 N-канальныx МОП-транзистора PicostAr-10 (1,5x3,4), соответствующие требованиям ROHS
Технические параметры
| ECCN | EAR99 |
| Type | 2 N-Channel |
| HTSUS | 8541.29.0095 |
| Brand: | Texas Instruments |
| Series | NexFETв„ў -> |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| FET Type | 2 N-Channel (Dual) Common Drain |
| Fall Time: | 712 ns |
| Rise Time: | 260 ns |
| Вес, г | 0.4 |
| FET Feature | Logic Level Gate |
| Power - Max | 2.5W |
| RoHS Status | ROHS3 Compliant |
| Technology: | Si |
| REACH Status | REACH Unaffected |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Configuration | Common Drain |
| Manufacturer: | Texas Instruments |
| Mounting Type | Surface Mount |
| Package/Case: | BGA-10 |
| Product Type: | MOSFETs |
| Configuration: | Dual |
| Package / Case | 10-XFLGA |
| Mounting Style: | SMD/SMT |
| Transistor Type: | 2 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 15 nC |
| Vgs(th) (Max) @ Id | 2.3V @ 250ВµA |
| Структура | MOSFET |
| Base Product Number | CSD87501 -> |
| Number of Channels: | 2 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Factory Pack Quantity: | 250 |
| Power Dissipation (Pd) | 2.5W |
| Особенности | - |
| Pd - Power Dissipation: | 2.5 W |
| Supplier Device Package | 10-Picostar (3.37x1.47) |
| Manufacturer Product Page | http://www.ti.com/general/docs/suppproductinfo.tsp |
| Total Gate Charge (Qg@Vgs) | 40nC@10V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 164 ns |
| Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
| Input Capacitance (Ciss@Vds) | - |
| Typical Turn-Off Delay Time: | 709 ns |
| Continuous Drain Current (Id) | - |
| Id - Continuous Drain Current: | 14 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Rds On - Drain-Source Resistance: | 4.6 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Vgs th - Gate-Source Threshold Voltage: | 1.3 V |
| Пороговое напряжение на затворе | 2.3V@250uA |
| Максимальное напряжение сток-исток Uси,В | - |
| Максимальная рассеиваемая мощность Pси макс..Вт | 2.5 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | - |