CSD25485F5, PicoStar-3 MOSFETs
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062254273
- Артикул
- CSD25485F5
- Бренд
- Texas Instruments
- PPAP
- No
- RoHS
- Details
- Brand
- Texas Instruments
- Width
- 0.77 mm
Цена по запросу
(от 57,19 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
MOSFET -20 В, P-канальный МОП-транзистор NexFET, одиночный LGA 0,8 мм x 1,5 мм, 42 Мом, защита затвора от электростатического разряда 3-PICOSTAR - от55 до 150
Технические параметры
| PPAP | No |
| RoHS | Details |
| Brand | Texas Instruments |
| Width | 0.77 mm |
| Brand: | Texas Instruments |
| Height | 0.35 mm |
| Length | 1.53 mm |
| Series | CSD25485F5 |
| Mounting | Surface Mount |
| Fall Time | 14 ns |
| Packaging | Cut Tape |
| Pin Count | 3 |
| Rise Time | 6 ns |
| Tradename | PicoStar |
| Automotive | No |
| Fall Time: | 14 ns |
| Rise Time: | 6 ns |
| Technology | Si |
| Вес, г | 0.06 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Manufacturer | Texas Instruments |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Texas Instruments |
| Package Width | 0.77(Max) |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | Picostar-3 |
| Package Length | 1.53(Max) |
| Mounting Style: | SMD/SMT |
| Package / Case: | PICOSTAR-3 |
| Transistor Type | 1 P-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 3.5 nC |
| Supplier Package | PicoStar |
| Transistor Type: | 1 P-Channel |
| Maximum IDSS (uA) | 0.1 |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 3.5 nC |
| Number of Channels | 1 Channel |
| Process Technology | FemtoFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity | P-Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity | 3000 |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation | 1.4 W |
| Typical Fall Time (ns) | 14 |
| Typical Rise Time (ns) | 6 |
| Pd - Power Dissipation: | 1.4 W |
| Vgs - Gate-Source Voltage | -12 V |
| Typical Turn-On Delay Time | 14 ns |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 27 ns |
| Typical Turn-On Delay Time: | 14 ns |
| Typical Turn-Off Delay Time: | 27 ns |
| Id - Continuous Drain Current | -3.2 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 7 S |
| Id - Continuous Drain Current: | 3.2 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 1400 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ Vgs (nC) | 2.7@4.5V |
| Forward Transconductance - Min: | 7 S |
| Maximum Gate Source Voltage (V) | -12 |
| Typical Turn-On Delay Time (ns) | 14 |
| Maximum Drain Source Voltage (V) | 20 |
| Rds On - Drain-Source Resistance | 250 mOhms |
| Typical Turn-Off Delay Time (ns) | 27 |
| Rds On - Drain-Source Resistance: | 250 mOhms |
| Typical Gate to Drain Charge (nC) | 0.56 |
| Maximum Gate Threshold Voltage (V) | 1.3 |
| Typical Gate Threshold Voltage (V) | 0.95 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 5.3 |
| Typical Input Capacitance @ Vds (pF) | 410@10V |
| Vds - Drain-Source Breakdown Voltage | -20 V |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Maximum Drain Source Resistance (mOhm) | 35@8V |
| Vgs th - Gate-Source Threshold Voltage | -1.3 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.3 V |
| Maximum Gate Source Leakage Current (nA) | 25 |