CSD25480F3, PicoStar-3 MOSFETs
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017659430
- Артикул
- CSD25480F3
- Бренд
- Texas Instruments
- RoHS
- Details
- Type
- 1PCSPChannel
- Brand
- Texas Instruments
- Width
- 0.64 mm
Цена по запросу
(от 11,14 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
20 В 1,7 А, 500 МВт, 132 Мом при 400 мА, 8 В 1.2V@250uA 1-канальные МОП-транзисторы PicoStar-3 соответствуют требованиям ROHS
Технические параметры
| RoHS | Details |
| Type | 1PCSPChannel |
| Brand | Texas Instruments |
| Width | 0.64 mm |
| Brand: | Texas Instruments |
| Height | 0.35 mm |
| Length | 0.73 mm |
| Series | CSD25480F3 |
| Fall Time | 7 ns |
| Packaging | Cut Tape |
| Rise Time | 5 ns |
| Tradename | PicoStar |
| Fall Time: | 7 ns |
| Rise Time: | 5 ns |
| Technology | Si |
| Вес, г | 0.05 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Manufacturer | Texas Instruments |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Texas Instruments |
| Package/Case: | PICOSTAR-3 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | Picostar-3 |
| Mounting Style: | SMD/SMT |
| Transistor Type | 1 P-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 0.7 nC |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 700 pC |
| Number of Channels | 1 Channel |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity | P-Channel |
| Transistor Polarity: | P-Channel |
| Factory Pack Quantity | 250 |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation | 500 mW(1/2 W) |
| Power Dissipation (Pd) | 500mW |
| Особенности | - |
| Pd - Power Dissipation: | 500 mW |
| Vgs - Gate-Source Voltage | -12 V |
| Total Gate Charge (Qg@Vgs) | 910pC@10V |
| Typical Turn-On Delay Time | 9 ns |
| Typical Turn-Off Delay Time | 13 ns |
| Typical Turn-On Delay Time: | 9 ns |
| Input Capacitance (Ciss@Vds) | 155pF@10V |
| Typical Turn-Off Delay Time: | 13 ns |
| Continuous Drain Current (Id) | 1.7A |
| Id - Continuous Drain Current | -1.7 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 8 S |
| Id - Continuous Drain Current: | 1.7 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 8 S |
| Rds On - Drain-Source Resistance | 840 mOhm |
| Vds - Drain-Source Breakdown Voltage | -20 V |
| Vgs th - Gate-Source Threshold Voltage | -950 mV |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Пороговое напряжение на затворе | 1.2V@250uA |
| Максимальное напряжение сток-исток Uси,В | 20 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.5 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 132mΩ@400mA, 8V |