Транзистор полевой CSD25402Q3A
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062671609
- Артикул
- CSD25402Q3A
- Бренд
- Texas Instruments
- Brand:
- Texas Instruments
- Series
- NexFET
- Series:
- CSD25402Q3A
- Pin Count
- 8
Цена по запросу
(от 56 ₽)
Минимальный заказ: 2500 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор МОП силовой, Транзистор P-МОП, полевой, 20 В 72 А 2.8 Вт, VSON8
Технические параметры
| Brand: | Texas Instruments |
| Series | NexFET |
| Series: | CSD25402Q3A |
| Pin Count | 8 |
| Fall Time: | 12 ns |
| Rise Time: | 7 ns |
| Tradename: | NexFET |
| Вес, г | 1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | P |
| Package Type | VSONP |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Texas Instruments |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | VSONP-8 |
| Transistor Type: | 1 P-Channel Power MOSFET |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 7.5 nC |
| T ;ROHS COMPLIANT | YESC ; C D C I |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | P Channel |
| Transistor Polarity: | P-Channel |
| Pd - Power Dissipation: | 69 W |
| Vgs - Gate-Source Voltage | 1.15V @ 250uA |
| Vgs - Gate-Source Voltage: | -12 V, +12 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 10 ns |
| Maximum Drain Source Voltage | 20 V |
| Typical Turn-Off Delay Time: | 25 ns |
| Id - Continuous Drain Current: | 76 A |
| Maximum Gate Threshold Voltage | 0.65V |
| Maximum Operating Temperature: | +125 C |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 8900000 Ω |
| Maximum Continuous Drain Current | 76 A |
| Rds On - Drain-Source Resistance | 8.9mО© @ 10A,4.5V |
| Rds On - Drain-Source Resistance: | 8.9 mOhms |
| Power Dissipation-Max (Ta=25В°C) | 2.8W |
| Vds - Drain-Source Breakdown Voltage | 20V |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Continuous Drain Current (Id) @ 25В°C | 76A |
| Vgs th - Gate-Source Threshold Voltage: | 650 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |