CSD25310Q2T, Транзистор: P-MOSFET
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- Код товара
- 8017550513
- Артикул
- CSD25310Q2T
- Бренд
- Texas Instruments
- ECCN
- EAR99
- Type
- P Channel
- HTSUS
- 8541.29.0095
- Brand:
- Texas Instruments
Цена по запросу
(от 97,63 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
20 В 20 А 2,9 Вт 23.9mOhm@5A,4.5 В 1.1V@250uA P-канальные МОП-транзисторы WSON-6(2x2) ROHS
Технические параметры
| ECCN | EAR99 |
| Type | P Channel |
| HTSUS | 8541.29.0095 |
| Brand: | Texas Instruments |
| Series | NexFETв„ў -> |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Series: | CSD25310Q2 |
| FET Type | P-Channel |
| Vgs (Max) | В±8V |
| Fall Time: | 5 ns |
| Rise Time: | 15 ns |
| Technology | MOSFET (Metal Oxide) |
| Tradename: | NexFET |
| Вес, г | 1 |
| RoHS Status | ROHS3 Compliant |
| Technology: | Si |
| REACH Status | REACH Unaffected |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Texas Instruments |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Style: | SMD/SMT |
| Package / Case: | WSON-6 |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 4.7 nC |
| Vgs(th) (Max) @ Id | 1.1V @ 250ВµA |
| Структура | MOSFET |
| Base Product Number | CSD25310Q2 -> |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | P-Channel |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 2.9W |
| Rds On (Max) @ Id, Vgs | 23.9mOhm @ 5A, 4.5V |
| Особенности | - |
| Pd - Power Dissipation: | 2.9 W |
| Power Dissipation (Max) | 2.9W (Ta) |
| Supplier Device Package | 6-WSON (2x2) |
| Manufacturer Product Page | http://www.ti.com/general/docs/suppproductinfo.tsp |
| Total Gate Charge (Qg@Vgs) | 4.7nC@4.5V |
| Vgs - Gate-Source Voltage: | -8 V, +8 V |
| Typical Turn-On Delay Time: | 8 ns |
| Gate Charge (Qg) (Max) @ Vgs | 4.7nC @ 4.5V |
| Input Capacitance (Ciss@Vds) | 655pF@10V |
| Typical Turn-Off Delay Time: | 15 ns |
| Continuous Drain Current (Id) | 20A |
| Drain to Source Voltage (Vdss) | 20V |
| Id - Continuous Drain Current: | 20 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 34 S |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Rds On - Drain-Source Resistance: | 19.9 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 655pF @ 10V |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs th - Gate-Source Threshold Voltage: | 1.1 V |
| Current - Continuous Drain (Id) @ 25В°C | 20A (Ta) |
| Factory Pack Quantity: Factory Pack Quantity: | 250 |
| Пороговое напряжение на затворе | 1.1V@250uA |
| Максимальное напряжение сток-исток Uси,В | 20 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 2.9 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 23.9mΩ@5A, 4.5V |