NexFET N-Channel MOSFET, 272 A, 100 V, 3-Pin D2PAK CSD19536KTTT
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8371812591
- Артикул
- CSD19536KTTT
- Бренд
- Texas Instruments
- Case
- D2PAK
- Width
- 9.65mm
- Brand:
- Texas Instruments
- Series
- NexFET
Цена по запросу
(от 1 840 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
N-канальный силовой МОП-транзистор NexFET™, Texas Instruments
Технические параметры
| Case | D2PAK |
| Width | 9.65mm |
| Brand: | Texas Instruments |
| Series | NexFET |
| Series: | CSD19536KTT |
| Mounting | SMD |
| Pin Count | 3 |
| Fall Time: | 6 ns |
| Rise Time: | 8 ns |
| Technology | NexFET™ |
| Tradename: | NexFET |
| Вес, г | 1 |
| Gate charge | 118nC |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | TEXAS INSTRUMENTS |
| Package Type | D2PAK(TO-263) |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Drain current | 200A |
| Manufacturer: | Texas Instruments |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-263-3 |
| Transistor Type: | 1 N-Channel |
| Power dissipation | 375W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 118 nC |
| Type of transistor | N-MOSFET |
| Структура | N-Channel |
| Gate-source voltage | ±20V |
| Moisture Sensitive: | Yes |
| Number of Channels: | 1 Channel |
| On-state resistance | 2.8mΩ |
| Transistor Material | Si |
| Drain-source voltage | 100V |
| Pulsed drain current | 400A |
| Transistor Polarity: | N-Channel |
| Forward Diode Voltage | 1.1V |
| Особенности | - |
| Pd - Power Dissipation: | 375 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 375 W |
| Typical Gate Charge @ Vgs | 118 nC @ 0 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 13 ns |
| Maximum Drain Source Voltage | 100 V |
| Typical Turn-Off Delay Time: | 32 ns |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 272 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 329 S |
| Maximum Drain Source Resistance | 2.8 mΩ |
| Maximum Continuous Drain Current | 272 A |
| Rds On - Drain-Source Resistance: | 2.4 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 150 |
| Максимальное напряжение сток-исток Uси,В | 100 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 272 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 375 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |