CSD19534KCS, MOSFETs 100V N-Channel NexFE T Pwr MOSFET
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- Код товара
- 8004605657
- Артикул
- CSD19534KCS
- Бренд
- Texas Instruments
- Width
- 4.7mm
- Brand:
- Texas Instruments
- Series
- NexFET
- Series:
- CSD19534KCS
Цена по запросу
(от 169,52 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 100В, 100А, 118Вт, TO220-3 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Width | 4.7mm |
| Brand: | Texas Instruments |
| Series | NexFET |
| Series: | CSD19534KCS |
| Pin Count | 3 |
| Fall Time: | 1 ns |
| Packaging: | Tube |
| Rise Time: | 2 ns |
| Tradename: | NexFET |
| Вес, г | 3.45 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TO-220 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Texas Instruments |
| Mounting Type | Through Hole |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 16.4 nC |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Forward Diode Voltage | 1.1V |
| Особенности | - |
| Pd - Power Dissipation: | 118 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 118 W |
| Typical Gate Charge @ Vgs | 17.1 nC @ 0 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 6 ns |
| Maximum Drain Source Voltage | 100 V |
| Typical Turn-Off Delay Time: | 9 ns |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 100 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Maximum Drain Source Resistance | 20 mΩ |
| Maximum Continuous Drain Current | 100 A |
| Rds On - Drain-Source Resistance: | 16.5 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.4 V |
| Factory Pack Quantity: Factory Pack Quantity: | 550 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 100 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 118 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |