CSD19505KCS, Транзистор: N-MOSFET, полевой, 80В, 150А, 300Вт, TO220-3
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- Код товара
- 8017150021
- Артикул
- CSD19505KCS
- Бренд
- Texas Instruments
- Case
- TO220-3
- Brand:
- Texas Instruments
- Вид
- MOSFET
- Тип
- полевой
Цена по запросу
(от 310 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 80В, 150А, 300Вт, TO220-3 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Case | TO220-3 |
| Brand: | Texas Instruments |
| Вид | MOSFET |
| Тип | полевой |
| Series: | CSD19505KCS |
| Military | No |
| Mounting | THT |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Fall Time: | 6 ns |
| Packaging: | Tube |
| Rise Time: | 16 ns |
| Technology | NexFET™ |
| Tradename: | NexFET |
| Вес, г | 3.65 |
| Gate charge | 76nC |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | TEXAS INSTRUMENTS |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Корпус | to220 |
| Channel Mode: | Enhancement |
| Drain current | 150A |
| Manufacturer: | Texas Instruments |
| Product Type: | MOSFET |
| Configuration: | Single |
| Kind of channel | enhanced |
| Kind of package | tube |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Supplier Package | TO-220 |
| Transistor Type: | 1 N-Channel |
| Power dissipation | 300W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 76 nC |
| Heatsink thickness | 1.14…1.4mm |
| Process Technology | NexFET |
| Type of transistor | N-MOSFET |
| Структура | MOSFET |
| Gate-source voltage | ±20V |
| Number of Channels: | 1 Channel |
| On-state resistance | 2.6mΩ |
| Drain-source voltage | 80V |
| Transistor Polarity: | N-Channel |
| Особенности | - |
| Pd - Power Dissipation: | 300 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Operating Temperature - (?C) | -55~175 |
| Id - Continuous Drain Current: | 100 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 262 S |
| Maximum Power Dissipation - (mW) | 300000 |
| Typical Gate Charge @ 10V - (nC) | 76 |
| Typical Gate Charge @ Vgs - (nC) | 76@10V |
| Maximum Gate Source Voltage - (V) | ?20 |
| Rds On - Drain-Source Resistance: | 3.1 mOhms |
| Maximum Drain Source Voltage - (V) | 80 |
| Maximum Gate Threshold Voltage - (V) | 3.2 |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Maximum Continuous Drain Current - (A) | 150 |
| Typical Input Capacitance @ Vds - (pF) | 6090@40V |
| Vgs th - Gate-Source Threshold Voltage: | 2.6 V |
| Maximum Drain Source Resistance - (mOhm) | 3.1@10V |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Пороговое напряжение на затворе | 5V@250uA |
| Максимальное напряжение сток-исток Uси,В | 80 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 150 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 300 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |