CSD19502Q5B, VSON-CLIP-8(6x5) MOSFETs
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- Код товара
- 8062931816
- Артикул
- CSD19502Q5B
- Бренд
- Texas Instruments
- RoHS
- Details
- Brand
- Texas Instruments
- Width
- 5 mm
- Brand:
- Texas Instruments
Цена по запросу
(от 303,57 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
80 В, N-канальный МОП-транзистор NexFET™, одиночный, 5 мм x 6 мм, 4,1 Мом, 8-канальный, с зажимом от -55 до 150
Технические параметры
| RoHS | Details |
| Brand | Texas Instruments |
| Width | 5 mm |
| Brand: | Texas Instruments |
| Height | 1 mm |
| Length | 6 mm |
| Series | CSD19502Q5B |
| Fall Time | 7 ns |
| Packaging | Cut Tape |
| Rise Time | 6 ns |
| Tradename | NexFET |
| Fall Time: | 7 ns |
| Rise Time: | 6 ns |
| Technology | Si |
| Вес, г | 0.13 |
| Technology: | Si |
| Manufacturer | Texas Instruments |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Texas Instruments |
| Package/Case: | VSON-CLIP-8 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | VSON-Clip-8 |
| Mounting Style: | SMD/SMT |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 48 nC |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 48 nC |
| Number of Channels | 1 Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity | N-Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 2500 |
| Factory Pack Quantity: | 2500 |
| Pd - Power Dissipation | 3.2 W |
| Pd - Power Dissipation: | 3.2 W |
| Vgs - Gate-Source Voltage | 20 V |
| Typical Turn-On Delay Time | 8 ns |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-Off Delay Time | 22 ns |
| Typical Turn-On Delay Time: | 8 ns |
| Typical Turn-Off Delay Time: | 22 ns |
| Id - Continuous Drain Current | 100 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 88 S |
| Id - Continuous Drain Current: | 100 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 88 S |
| Rds On - Drain-Source Resistance | 4.1 mOhms |
| Rds On - Drain-Source Resistance: | 4.1 mOhms |
| Vds - Drain-Source Breakdown Voltage | 80 V |
| Vds - Drain-Source Breakdown Voltage: | 80 V |
| Vgs th - Gate-Source Threshold Voltage | 2.7 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.7 V |