CSD18542KTT, Trans MOSFET N-CH Si 60V 200A 3-Pin(2+Tab) DDPAK T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8002238085
- Артикул
- CSD18542KTT
- Бренд
- Texas Instruments
- Type
- null
- Brand:
- Texas Instruments
- Fall Time:
- 2 ns
- Rise Time:
- 4 ns
Цена по запросу
(от 229 ₽)
Минимальный заказ: 500 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
60 В 200 А, 4 моМ при 100 А, 10 В 250 Вт 2.2V@250uA нулевые МОП-транзисторы TO-263-3 СООТВЕТСТВУЮТ требованиям ROHS
Технические параметры
| Type | null |
| Brand: | Texas Instruments |
| Fall Time: | 2 ns |
| Rise Time: | 4 ns |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Texas Instruments |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | D2PAK-3(TO-263-3) |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 44 nC |
| Moisture Sensitive: | Yes |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55℃~+175℃@(Tj) |
| Factory Pack Quantity: | 500 |
| Power Dissipation (Pd) | 250W |
| Pd - Power Dissipation: | 250 W |
| Total Gate Charge (Qg@Vgs) | 57nC@10V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 6 ns |
| Input Capacitance (Ciss@Vds) | 5.07nF@30V |
| Typical Turn-Off Delay Time: | 16 ns |
| Continuous Drain Current (Id) | 200A;170A |
| Id - Continuous Drain Current: | 200 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 198 S |
| Rds On - Drain-Source Resistance: | 4 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |