CSD18535KTT, Транзистор: N-MOSFET
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- Код товара
- 8074955593
- Артикул
- CSD18535KTT
- Бренд
- Texas Instruments
- RoHS
- No
- Brand
- Texas Instruments
- Width
- 10.26
- Brand:
- Texas Instruments
Цена по запросу
(от 443,34 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
МОП-транзистор 60 В, N-канальный МОП-транзистор NexFET power, одиночный D2PAK, 2 Мом 3-DDPAK/TO-263 -55 - 175
Технические параметры
| RoHS | No |
| Brand | Texas Instruments |
| Width | 10.26 |
| Brand: | Texas Instruments |
| Height | 4.7 mm |
| Length | 9.25 mm |
| Series | CSD18535KTT |
| Series: | CSD18535KTT |
| FET Type | N-Channel |
| Fall Time | 3 ns |
| Packaging | Cut Tape |
| Rise Time | 3 ns |
| Tradename | NexFET |
| Vgs (Max) | ±20V |
| Fall Time: | 3 ns |
| Rise Time: | 3 ns |
| Technology | Si |
| Tradename: | NexFET |
| Вес, г | 1.2 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Manufacturer | Texas Instruments |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Texas Instruments |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | TO-263-3 |
| Mounting Style: | SMD/SMT |
| Package / Case: | TO-263-3 |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 81 nC |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 81 nC |
| Moisture Sensitive | Yes |
| Number of Channels | 1 Channel |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Moisture Sensitive: | Yes |
| Number of Channels: | 1 Channel |
| Transistor Polarity | N-Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 50 |
| Operating Temperature | -55°C ~ 175°C(TJ) |
| Pd - Power Dissipation | 300 W |
| Rds On (Max) @ Id, Vgs | 2mOhm @ 100A, 10V |
| Pd - Power Dissipation: | 300 W |
| Power Dissipation (Max) | 300W(Tc) |
| Supplier Device Package | TO-263(DDPAK-3) |
| Vgs - Gate-Source Voltage | 20 V |
| Typical Turn-On Delay Time | 9 ns |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-Off Delay Time | 19 ns |
| Typical Turn-On Delay Time: | 9 ns |
| Gate Charge (Qg) (Max) @ Vgs | 81 nC @ 10 V |
| Typical Turn-Off Delay Time: | 19 ns |
| Id - Continuous Drain Current | 200 A |
| Maximum Operating Temperature | +175 C |
| Minimum Operating Temperature | -55 C |
| Drain to Source Voltage (Vdss) | 60 V |
| Forward Transconductance - Min | 263 S |
| Id - Continuous Drain Current: | 200 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 263 S |
| Rds On - Drain-Source Resistance | 2.3 mOhm |
| Rds On - Drain-Source Resistance: | 2.3 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 6620 pF @ 30 V |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs th - Gate-Source Threshold Voltage | 1.9 V |
| Current - Continuous Drain (Id) @ 25°C | 200A(Ta) |
| Vgs th - Gate-Source Threshold Voltage: | 1.9 V |
| Factory Pack Quantity: Factory Pack Quantity: | 500 |