CSD18533KCS, MOSFETs 60V N-Chnl NxFT Pwr MSFT ..
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8004997250
- Артикул
- CSD18533KCS
- Бренд
- Texas Instruments
- Brand:
- Texas Instruments
- Series:
- CSD18533KCS
- Fall Time:
- 3.2 ns
- Packaging:
- Tube
Цена по запросу
(от 205,01 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
TI N-канал 8-23-12
Технические параметры
| Brand: | Texas Instruments |
| Series: | CSD18533KCS |
| Fall Time: | 3.2 ns |
| Packaging: | Tube |
| Rise Time: | 4.8 ns |
| Tradename: | NexFET |
| Вес, г | 1.95 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Texas Instruments |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 28 nC |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Особенности | - |
| Pd - Power Dissipation: | 160 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 5.7 ns |
| Typical Turn-Off Delay Time: | 13 ns |
| Id - Continuous Drain Current: | 100 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 150 S |
| Rds On - Drain-Source Resistance: | 6.9 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.9 V |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |