CSD18532KCS, Транзистор N-MOSFET, полевой, 60В, 100А, 250Вт, TO220-3, NexFET™
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- Код товара
- 8017541601
- Артикул
- CSD18532KCS
- Бренд
- Texas Instruments
- Case
- TO220-3
- Brand:
- Texas Instruments
- Series:
- CSD18532KCS
- Mounting
- THT
Цена по запросу
(от 291,32 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
TI N-канал 8-23-12
Технические параметры
| Case | TO220-3 |
| Brand: | Texas Instruments |
| Series: | CSD18532KCS |
| Mounting | THT |
| Fall Time: | 5.6 ns |
| Packaging: | Tube |
| Rise Time: | 5.3 ns |
| Technology | NexFET™ |
| Tradename: | NexFET |
| Вес, г | 1.99 |
| Gate charge | 44nC |
| Technology: | Si |
| Manufacturer | TEXAS INSTRUMENTS |
| Polarisation | unipolar |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Drain current | 100A |
| Manufacturer: | Texas Instruments |
| Product Type: | MOSFET |
| Configuration: | Single |
| Kind of channel | enhanced |
| Kind of package | tube |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Transistor Type: | 1 N-Channel |
| Power dissipation | 250W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 44 nC |
| Heatsink thickness | 1.14…1.4mm |
| Type of transistor | N-MOSFET |
| Gate-source voltage | ±20V |
| Number of Channels: | 1 Channel |
| On-state resistance | 3.3mΩ |
| Drain-source voltage | 60V |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 250 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 7.8 ns |
| Typical Turn-Off Delay Time: | 24.2 ns |
| Id - Continuous Drain Current: | 169 A |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 187 S |
| Rds On - Drain-Source Resistance: | 4.2 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |