CSD18510KCS, Транзистор: N-MOSFET
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8038437562
- Артикул
- CSD18510KCS
- Бренд
- Texas Instruments
- HTS
- COMPONENTS
- Tab
- Tab
- PPAP
- No
- SVHC
- Yes
Цена по запросу
(от 1 140 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| HTS | COMPONENTS |
| Tab | Tab |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Material | Si |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Вес, г | 2.2 |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Package Width | 4.7(Max) |
| Package Height | 9.25(Max) |
| Package Length | 10.67(Max) |
| EDA / CAD Models | CSD18510KCS by Ultra Librarian |
| Product Category | Power MOSFET |
| Supplier Package | TO-220 |
| Maximum IDSS (uA) | 1 |
| Process Technology | NexFET |
| Структура | MOSFET |
| Standard Package Name | TO |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 8 |
| Typical Rise Time (ns) | 8 |
| Особенности | - |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 250000 |
| Typical Gate Charge @ 10V (nC) | 118 |
| Typical Gate Charge @ Vgs (nC) | 58@4.5V|118@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 10 |
| Maximum Drain Source Voltage (V) | 40 |
| Typical Turn-Off Delay Time (ns) | 29 |
| Typical Gate to Drain Charge (nC) | 21 |
| Maximum Gate Threshold Voltage (V) | 2.3 |
| Typical Gate Threshold Voltage (V) | 1.7 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 200 |
| Typical Input Capacitance @ Vds (pF) | 8770@20V |
| Maximum Drain Source Resistance (MOhm) | 1.7@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 250 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |