CSD17579Q5AT, Транзистор: N-MOSFET, полевой, 30В, 25А, 36Вт, VSONP8, 5x6мм
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8061262592
- Артикул
- CSD17579Q5AT
- Бренд
- Texas Instruments
- Brand:
- Texas Instruments
- Series:
- CSD17579Q5A
- Fall Time:
- 1 ns
- Rise Time:
- 7 ns
Цена по запросу
(от 102,68 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
TI N-канал 8-23-12
Технические параметры
| Brand: | Texas Instruments |
| Series: | CSD17579Q5A |
| Fall Time: | 1 ns |
| Rise Time: | 7 ns |
| Tradename: | NexFET |
| Вес, г | 0.15 |
| Technology: | Si |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Texas Instruments |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | VSONP-8 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 15.1 nC |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 36 W |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 3 ns |
| Typical Turn-Off Delay Time: | 13 ns |
| Id - Continuous Drain Current: | 25 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 36 S |
| Rds On - Drain-Source Resistance: | 11.6 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 250 |