CSD17573Q5B, Транзистор MOSFET TDFN8
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017547201
- Артикул
- CSD17573Q5B
- Бренд
- Texas Instruments
- RoHS
- Details
- Brand
- Texas Instruments
- Brand:
- Texas Instruments
- Series
- CSD17573Q5B
Цена по запросу
(от 130,50 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор MOSFET TDFN8
Технические параметры
| RoHS | Details |
| Brand | Texas Instruments |
| Brand: | Texas Instruments |
| Series | CSD17573Q5B |
| Series: | CSD17573Q5B |
| Fall Time | 7 ns |
| Packaging | Reel |
| Rise Time | 20 ns |
| Fall Time: | 7 ns |
| Rise Time: | 20 ns |
| Technology | Si |
| Tradename: | NexFET |
| Вес, г | 0.13 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Manufacturer | Texas Instruments |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | 1 N-Channel |
| Manufacturer: | Texas Instruments |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | VSON-8 |
| Mounting Style: | SMD/SMT |
| Package / Case: | VSON-CLIP-8 |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 64 nC |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 49 nC |
| Number of Channels | 1 Channel |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity | N-Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 250 |
| Pd - Power Dissipation | 195 W |
| Особенности | - |
| Pd - Power Dissipation: | 195 W |
| Vgs - Gate-Source Voltage | +/-20 V |
| Typical Turn-On Delay Time | 6 ns |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-Off Delay Time | 40 ns |
| Typical Turn-On Delay Time: | 6 ns |
| Typical Turn-Off Delay Time: | 40 ns |
| Id - Continuous Drain Current | 332 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 181 S |
| Id - Continuous Drain Current: | 100 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 181 S |
| кол-во в упаковке | 2500 |
| Rds On - Drain-Source Resistance | 840 uOhms |
| Rds On - Drain-Source Resistance: | 1 mOhms |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage | 1.1 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальная рассеиваемая мощность Pси макс..Вт | 3.2 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |