CSD17308Q3T, Транзистор N-MOSFET, полевой, 30В, 50А, 28Вт, NexFET™
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- Код товара
- 8015348521
- Артикул
- CSD17308Q3T
- Бренд
- Texas Instruments
- Case
- VSON-CLIP8
- ECCN
- EAR99
- PPAP
- No
- HTSUS
- 8541.29.0095
Цена по запросу
(от 154,53 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
N-канальный 30 В, 14 А (Ta), 44 А (Tc), 2,7 Вт (Ta), 28 Вт (Tc) для поверxностного монтажа с 8-контактным зажимом (3.3x3.3)
Технические параметры
| Case | VSON-CLIP8 |
| ECCN | EAR99 |
| PPAP | No |
| HTSUS | 8541.29.0095 |
| Brand: | Texas Instruments |
| Series | NexFETв„ў -> |
| EU RoHS | Compliant with Exemption |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Series: | CSD17308Q3 |
| FET Type | N-Channel |
| Mounting | SMD |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Vgs (Max) | +10V, -8V |
| Automotive | No |
| Dimensions | 3.3x3.3mm |
| Fall Time: | 2.3 ns |
| Lead Shape | No Lead |
| Rise Time: | 5.7 ns |
| Technology | NexFET™ |
| Tradename: | NexFET |
| Вес, г | 0.07 |
| Gate charge | 3.9nC |
| PCB changed | 8 |
| Part Status | Active |
| RoHS Status | ROHS3 Compliant |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | TEXAS INSTRUMENTS |
| Package Type | VSON-CLIP |
| Polarisation | unipolar |
| REACH Status | REACH Affected |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single Quad Drain Triple Source |
| Drain current | 50A |
| Manufacturer: | Texas Instruments |
| Mounting Type | Surface Mount |
| Package/Case: | VSON-CLIP-8 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | 8-PowerTDFN |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Mounting Style: | SMD/SMT |
| Product Category | Power MOSFET |
| Supplier Package | VSON-CLIP EP |
| Transistor Type: | 1 N-Channel |
| Maximum IDSS (uA) | 1 |
| Power dissipation | 2.7W |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 3.9 nC |
| Process Technology | NexFET |
| Type of transistor | N-MOSFET |
| Vgs(th) (Max) @ Id | 1.8V @ 250ВµA |
| Структура | MOSFET |
| Base Product Number | CSD17308 -> |
| Gate-source voltage | ±10V |
| Number of Channels: | 1 Channel |
| On-state resistance | 9.4mΩ |
| Drain-source voltage | 30V |
| Pulsed drain current | 167A |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Standard Package Name | SON |
| Rds On (Max) @ Id, Vgs | 10.3mOhm @ 10A, 8V |
| Typical Fall Time (ns) | 2.3 |
| Typical Rise Time (ns) | 5.7 |
| Особенности | - |
| Pd - Power Dissipation: | 28 W |
| Power Dissipation (Max) | 2.7W (Ta), 28W (Tc) |
| Supplier Device Package | 8-VSON-CLIP (3.3x3.3) |
| Manufacturer Product Page | http://www.ti.com/general/docs/suppproductinfo.tsp |
| Vgs - Gate-Source Voltage: | -10 V, +10 V, -8 V, +8 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 4.5 ns |
| Gate Charge (Qg) (Max) @ Vgs | 5.1nC @ 4.5V |
| Maximum Drain Source Voltage | 30 V |
| Typical Turn-Off Delay Time: | 9.9 ns |
| Drain to Source Voltage (Vdss) | 30V |
| Id - Continuous Drain Current: | 60 A |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 2700 |
| Minimum Operating Temperature: | -55 C |
| Typical Gate Charge @ Vgs (nC) | 3.9@4.5V |
| Forward Transconductance - Min: | 37 S |
| Maximum Gate Source Voltage (V) | 10 |
| Typical Turn-On Delay Time (ns) | 4.5 |
| Maximum Continuous Drain Current | 14 A |
| Maximum Drain Source Voltage (V) | 30 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Typical Turn-Off Delay Time (ns) | 9.9 |
| Rds On - Drain-Source Resistance: | 11.8 mOhms |
| Typical Gate to Drain Charge (nC) | 0.8 |
| Maximum Gate Threshold Voltage (V) | 1.8 |
| Typical Gate Threshold Voltage (V) | 1.3 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 15V |
| Maximum Continuous Drain Current (A) | 50 |
| Typical Input Capacitance @ Vds (pF) | 540@15V |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 3V, 8V |
| Maximum Drain Source Resistance (mOhm) | 10.3@8V |
| Vgs th - Gate-Source Threshold Voltage: | 1.3 V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Current - Continuous Drain (Id) @ 25В°C | 14A (Ta), 44A (Tc) |
| Factory Pack Quantity: Factory Pack Quantity: | 250 |
| Пороговое напряжение на затворе | 2.5V@250uA |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 50 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 28 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |