CSD15571Q2, 20V 22A 15mOhm@10V,5A 2.5W N Channel WSON-6(2x2) MOSFETs
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- Код товара
- 8025082677
- Артикул
- CSD15571Q2
- Бренд
- Texas Instruments
- RoHS
- Details
- Brand
- Texas Instruments
- Width
- 2 mm
- Brand:
- Texas Instruments
Цена по запросу
(от 35,27 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
20 В, N-канальный МОП-транзистор NexFET™, одиночный, 2 мм x 2 мм, 19,2 Мом
Технические параметры
| RoHS | Details |
| Brand | Texas Instruments |
| Width | 2 mm |
| Brand: | Texas Instruments |
| Height | 0.75 mm |
| Length | 2 mm |
| Series | CSD15571Q2 |
| Series: | CSD15571Q2 |
| Fall Time | 4.1 ns |
| Packaging | Cut Tape |
| Rise Time | 17.2 ns |
| Tradename | NexFET |
| Fall Time: | 4.1 ns |
| Rise Time: | 17.2 ns |
| Technology | Si |
| Tradename: | NexFET |
| Вес, г | 0.04 |
| Technology: | Si |
| Unit Weight | 0.000198 oz |
| Manufacturer | Texas Instruments |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Texas Instruments |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | WSON-FET-6 |
| Mounting Style: | SMD/SMT |
| Package / Case: | WSON-6 |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 2.5 nC |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 5.1 nC |
| Number of Channels | 1 Channel |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity | N-Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 3000 |
| Pd - Power Dissipation | 2.5 W |
| Power Dissipation (Pd) | 2.5W |
| Особенности | - |
| Pd - Power Dissipation: | 2.5 W |
| Vgs - Gate-Source Voltage | 20 V |
| Total Gate Charge (Qg@Vgs) | 6.7nC@10V |
| Typical Turn-On Delay Time | 17.2 ns |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-Off Delay Time | 9.9 ns |
| Typical Turn-On Delay Time: | 4.7 ns |
| Input Capacitance (Ciss@Vds) | 419pF@10V |
| Typical Turn-Off Delay Time: | 9.9 ns |
| Continuous Drain Current (Id) | 22A |
| Id - Continuous Drain Current | 2.1 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Id - Continuous Drain Current: | 22 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 25 S |
| Rds On - Drain-Source Resistance | 16 mOhms |
| Rds On - Drain-Source Resistance: | 15 mOhms |
| Vds - Drain-Source Breakdown Voltage | 20 V |
| Vds - Drain-Source Breakdown Voltage: | 20 V |
| Vgs th - Gate-Source Threshold Voltage | 1.45 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Пороговое напряжение на затворе | 1.9V@250uA |
| Максимальное напряжение сток-исток Uси,В | 20 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 22 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 2.5 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 15mΩ@10V, 5A |