CPH6123-TL-E, Bipolar Transistors - BJT SWITCHING DEVICE
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005368973
- Артикул
- CPH6123-TL-E
- Бренд
- ON Semiconductor***
- PPAP
- No
- SVHC
- Yes
- Type
- PNP
- EU RoHS
- Compliant with Exemption
Цена по запросу
(от 55,10 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
50 В 1,3 Вт 200 при 100 мА, 2 В 3 А Биполярные транзисторы PNP SOT-457-6 - BJT ROHS
Технические параметры
| PPAP | No |
| SVHC | Yes |
| Type | PNP |
| EU RoHS | Compliant with Exemption |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.05 |
| PCB changed | 6 |
| Part Status | Active |
| Power - Max | 1.3 W |
| Configuration | Single Quad Collector |
| Mounting Type | Surface Mount |
| Package Width | 1.6 |
| Package / Case | SC-74, SOT-457 |
| Package Length | 2.9 |
| Transistor Type | PNP |
| EDA / CAD Models | CPH6123-TL-E by Ultra Librarian |
| Product Category | Bipolar Power |
| Supplier Package | CPH |
| Operating Temperature | 150°C(TJ) |
| Standard Package Name | SOT |
| Collector Current (Ic) | 3A |
| Frequency - Transition | 390MHz |
| Power Dissipation (Pd) | 1.3W |
| SVHC Exceeds Threshold | Yes |
| Minimum DC Current Gain | 200@100mA@2V |
| Supplier Device Package | 6-CPH |
| Maximum Base Current (A) | 0.6 |
| Transition Frequency (fT) | 390MHz |
| Number of Elements per Chip | 1 |
| DC Current Gain (hFE@Ic,Vce) | 200@100mA, 2V |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 100mA, 2A |
| Current - Collector (Ic) (Max) | 3 A |
| Maximum Power Dissipation (mW) | 1300 |
| Collector Cut-Off Current (Icbo) | 1uA |
| Current - Collector Cutoff (Max) | 1µA(ICBO) |
| Maximum DC Collector Current (A) | 3 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Base Voltage (V) | 50 |
| Maximum Transition Frequency (MHz) | 390(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Operating Junction Temperature (°C) | 150 |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 100mA, 2V |
| Maximum Collector-Emitter Voltage (V) | 50 |
| Maximum Collector Cut-Off Current (nA) | 1000 |
| Collector-Emitter Breakdown Voltage (Vceo) | 50V |
| Maximum Base Emitter Saturation Voltage (V) | 1.2@100mA@2A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.23@50mA@1A|0.65@100mA@2A |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 650mV@100mA, 2A |