CMS45N10H8-HF, MOSFETs MOSFET N-CH 100VDS 20VGS 45A
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8018736301
- Артикул
- CMS45N10H8-HF
- Бренд
- Comchip Technology
- Brand:
- Comchip Technology
- FET Type
- N-Channel
- Vgs (Max)
- ±20V
- Fall Time:
- 46 ns
Цена по запросу
(от 144,83 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
N-канальный 100 В 45 А (Tc) 94,7 Вт (Tc) для поверxностного монтажа P-PAK (5x6)
Технические параметры
| Brand: | Comchip Technology |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Fall Time: | 46 ns |
| Rise Time: | 3.8 ns |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Manufacturer: | Comchip Technology |
| Mounting Type | Surface Mount |
| Package/Case: | PPAK5x6-8 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Package / Case | 8-PowerTDFN |
| Mounting Style: | SMD/SMT |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 16.2 nC |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55°C ~ 150°C(TJ) |
| Factory Pack Quantity: | 3000 |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 10A, 10V |
| Особенности | - |
| Pd - Power Dissipation: | 94.7 W |
| Power Dissipation (Max) | 94.7W(Tc) |
| Supplier Device Package | P-PAK(5x6) |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 16.6 ns |
| Gate Charge (Qg) (Max) @ Vgs | 16.2 nC @ 10 V |
| Typical Turn-Off Delay Time: | 75.5 ns |
| Drain to Source Voltage (Vdss) | 100 V |
| Id - Continuous Drain Current: | 45 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Rds On - Drain-Source Resistance: | 20 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 1003.9 pF @ 50 V |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 45A(Tc) |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Максимальное напряжение сток-исток Uси,В | 100 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 45 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |