CMPDM7002AG TR PBFREE, MOSFETs N-Ch Enh Mode FET 60Vds 60Vdg 40Vgs
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8062442498
- Артикул
- CMPDM7002AG TR PBFREE
- Бренд
- Central Semiconductor Corp
- ECCN
- EAR99
- HTSUS
- 8541.21.0095
- Brand:
- Central Semiconductor
- Package
- Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Цена по запросу
(от 26 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
N-канальный 60 В 280 мА (Ta) 350 МВт (Ta) для поверxностного монтажа SOT-23
Технические параметры
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |
| Brand: | Central Semiconductor |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Series: | CMxxDM |
| FET Type | N-Channel |
| Vgs (Max) | 40V |
| Technology | MOSFET (Metal Oxide) |
| Вес, г | 0.01 |
| RoHS Status | ROHS3 Compliant |
| Technology: | Si |
| REACH Status | REACH Unaffected |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Central Semiconductor |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 592 pC |
| Vgs(th) (Max) @ Id | 2.5V @ 250ВµA |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -65В°C ~ 150В°C (TJ) |
| Rds On (Max) @ Id, Vgs | 2Ohm @ 500mA, 10V |
| Pd - Power Dissipation: | 350 mW |
| Power Dissipation (Max) | 350mW (Ta) |
| Supplier Device Package | SOT-23 |
| Vgs - Gate-Source Voltage: | -40 V, +40 V |
| Typical Turn-On Delay Time: | 20 ns |
| Typical Turn-Off Delay Time: | 20 ns |
| Drain to Source Voltage (Vdss) | 60V |
| Id - Continuous Drain Current: | 280 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -65 C |
| Forward Transconductance - Min: | 80 mS |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Rds On - Drain-Source Resistance: | 2 Ohms |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Current - Continuous Drain (Id) @ 25В°C | 280mA (Ta) |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |