C3M0160120D, SiC MOSFETs SiC, MOSFET, 160mO, 1200V, TO-247-3, Industrial
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8007103750
- Артикул
- C3M0160120D
- Бренд
- WOLFSPEED
- Tab
- Tab
- Case
- TO247-3
- PPAP
- No
- SVHC
- Yes
Цена по запросу
(от 727,35 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор полевой MOSFET N-канальный SiC 1200В 17А TO-247-3
Технические параметры
| Tab | Tab |
| Case | TO247-3 |
| PPAP | No |
| SVHC | Yes |
| EU RoHS | Compliant with Exemption |
| Material | SiC |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Technology | C3M™, SiC |
| Вес, г | 1 |
| Gate charge | 38nC |
| PCB changed | 3 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Polarisation | unipolar |
| Корпус | TO-247-3 |
| Configuration | Single |
| Drain current | 12A |
| Package Width | 5.21(Max) |
| Package Length | 16.13(Max) |
| Kind of channel | enhancement |
| EDA / CAD Models | C3M0160120D by Ultra Librarian |
| Product Category | Power MOSFET |
| Supplier Package | TO-247 |
| Maximum IDSS (uA) | 50 |
| Power dissipation | 97W |
| Process Technology | C3M |
| Type of transistor | N-MOSFET |
| Структура | MOSFET |
| Gate-source voltage | -8…19V |
| On-state resistance | 256mΩ |
| Drain-source voltage | 1.2kV |
| Pulsed drain current | 34A |
| Standard Package Name | TO |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 13 |
| Typical Rise Time (ns) | 16 |
| Особенности | высоковольтный |
| Supplier Temperature Grade | Industrial |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 97000 |
| Typical Gate Charge @ Vgs (nC) | 38@15V |
| Maximum Gate Source Voltage (V) | 19 |
| Typical Output Capacitance (pF) | 39 |
| Typical Turn-On Delay Time (ns) | 30 |
| Maximum Drain Source Voltage (V) | 1200 |
| Typical Gate Plateau Voltage (V) | 6.4 |
| Typical Turn-Off Delay Time (ns) | 20 |
| Typical Diode Forward Voltage (V) | 4.5 |
| Typical Gate to Drain Charge (nC) | 12 |
| Maximum Gate Threshold Voltage (V) | 3.6 |
| Minimum Gate Threshold Voltage (V) | 1.8 |
| Typical Gate Threshold Voltage (V) | 2.8 |
| Typical Gate to Source Charge (nC) | 9 |
| Typical Reverse Recovery Time (ns) | 34 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 17 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Input Capacitance @ Vds (pF) | 632@1000V |
| Typical Reverse Recovery Charge (nC) | 194 |
| Maximum Drain Source Resistance (mOhm) | 208@15V |
| Maximum Gate Source Leakage Current (nA) | 250 |
| Maximum Positive Gate Source Voltage (V) | 15 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 34 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 3@1000V |
| Пороговое напряжение на затворе | - |
| Максимальное напряжение сток-исток Uси,В | 1200 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 160мОм |